Documentation
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3 documents
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Package Information
98ASA10732D, NI-400S-2S, 10.0x10.0x3.66, Pitch 7.8, 3 Pins
1805-2200 MHz, 48 W Avg., 48 V Airfast® RF Power GaN Transistor
A2G22S251-01S Receive alerts
The A2G22S251-01SR3 48 W RF power GaN transistor is designed for cellular base station applications covering the frequency range of 1805 to 2200 MHz.
NI-400S-2S Package Image
Product Details
Features
- High Terminal Impedances for Optimal Broadband Performance
- Designed for Digital Predistortion Error Correction Systems
- Optimized for Doherty Applications
- RoHS Compliant
Key Parametrics
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- Frequency (Min) (MHz)
- 1805
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- Frequency (Max) (MHz)
- 2200
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- Supply Voltage (Typ) (V)
- 48
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- Peak Power (Typ) (dBm)
- 52.9
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- Peak Power (Typ) (W)
- 195
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- Die Technology
- GaN
RF Performance Table
2000 MHz
Typical Single-Carrier W-CDMA Performance: VDD = 48 Vdc, IDQ = 200 mA, Pout = 48 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.| Frequency | Gps (dB) |
ηD (%) |
Output PAR (dB) |
ACPR (dBc) |
IRL (dB) |
| 1805 MHz | 17.4 | 33.5 | 7.0 | –34.7 | –14 |
| 1990 MHz | 17.3 | 34.3 | 7.1 | –35.1 | –11 |
| 2170 MHz | 17.7 | 37.5 | 6.8 | –33.2 | –12 |
Design Resources
Design Files
1-5 of 6 design files
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Models
A2G22S251-01S RF High-Power Model ADS Product Model Design Kit
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Models
A2G22S251-01S RF High-Power Model AWR Product Model Design Kit
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Models
RF High Power Model ADS Model Kit goto: Click the Download button to select.
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Models
RF High Power Model AWR Model Kit goto: Click the Download button to select.
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Models
A2G22S251-01S S-Parameters