1805-2200 MHz, 48 W Avg., 48 V Airfast® RF Power GaN Transistor

A2G22S251-01S

See product image

Product Details

Features

  • High Terminal Impedances for Optimal Broadband Performance
  • Designed for Digital Predistortion Error Correction Systems
  • Optimized for Doherty Applications
  • RoHS Compliant

Key Parametrics

  • Frequency (Min) (MHz)
    1805
  • Frequency (Max) (MHz)
    2200
  • Supply Voltage (Typ) (V)
    48
  • Peak Power (Typ) (dBm)
    52.9
  • Peak Power (Typ) (W)
    195
  • Die Technology
    GaN

RF Performance Table

2000 MHz

Typical Single-Carrier W-CDMA Performance: VDD = 48 Vdc, IDQ = 200 mA, Pout = 48 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
Frequency Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
IRL
(dB)
1805 MHz17.433.57.0–34.7–14
1990 MHz17.334.37.1–35.1–11
2170 MHz17.737.56.8–33.2–12

Design Resources

Select a section:

Documentation

Quick reference to our documentation types.

3 documents

Design Files

1-5 of 6 design files

Show All

Support

What do you need help with?