2110-2170 MHz, 59 W Avg., 48 V Airfast® RF Power GaN Transistor

A3G20S350-01S

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Product Details

Features

  • High terminal impedances for optimal broadband performance
  • Designed for digital predistortion error correction systems
  • Optimized for Doherty applications
  • RoHS compliant

Key Parametrics

  • Frequency (Min) (MHz)
    2110
  • Frequency (Max) (MHz)
    2170
  • Supply Voltage (Typ) (V)
    48
  • Peak Power (Typ) (dBm)
    56.1
  • Peak Power (Typ) (W)
    410
  • Die Technology
    GaN

RF Performance Table

2100 MHz

Typical Single-Carrier W-CDMA Performance: VDD = 48 Vdc, IDQ = 500 mA, Pout = 59 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.

Frequency Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
2110 MHz18.037.07.0–33.3
2140 MHz18.036.97.0–33.3
2170 MHz18.137.06.9–32.3

Design Resources

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Documentation

Quick reference to our documentation types.

4 documents

Design Files

2 design files

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