2110-2170 MHz, 59 W Avg., 48 V Airfast® RF Power GaN Transistor

A3G20S350-01S

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Product Details

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Features

  • High terminal impedances for optimal broadband performance
  • Designed for digital predistortion error correction systems
  • Optimized for Doherty applications
  • RoHS compliant

Part numbers include: A3G20S350-01S.

RF Performance Table

2100 MHz

Typical Single-Carrier W-CDMA Performance: VDD = 48 Vdc, IDQ = 500 mA, Pout = 59 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.

Frequency Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
2110 MHz18.037.07.0–33.3
2140 MHz18.036.97.0–33.3
2170 MHz18.137.06.9–32.3

Documentation

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4 documents

Design Resources

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Design Files

2 design files

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