100-3600 MHz, 1.26 W Avg., 28 V Airfast® RF Power LDMOS Transistor

AFT27S010N

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Product Details

Features

  • Greater Negative Gate-Source Voltage Range for Improved Class C Operation
  • Designed for Digital Predistortion Error Correction Systems
  • Universal Broadband Driven Device with Internal RF Feedback
  • RoHS Compliant
  • In Tape and Reel. T1 Suffix = 1000 Units, 16 mm Tape Width, 7-inch Reel.

Key Parametrics

  • Frequency (Min) (MHz)
    100
  • Frequency (Max) (MHz)
    3600
  • Supply Voltage (Typ) (V)
    28
  • Die Technology
    LDMOS

RF Performance Tables

700 MHz

Typical Single-Carrier W-CDMA Performance: VDD = 28 Vdc, IDQ = 80 mA, Pout = 1.26 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.(1)

2100 MHz

Typical Single-Carrier W-CDMA Performance: VDD = 28 Vdc, IDQ = 90 mA, Pout = 1.26 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.(1)

2300 MHz

Typical Single-Carrier W-CDMA Performance: VDD = 28 Vdc, IDQ = 90 mA, Pout = 1.26 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.(1)

2600 MHz

Typical Single-Carrier W-CDMA Performance: VDD = 28 Vdc, IDQ = 90 mA, Pout = 1.26 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.(1)

3500 MHz

Typical Single-Carrier W-CDMA Performance: VDD = 28 Vdc, IDQ = 80 mA, Pout = 1.26 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.(1)1. All data measured in fixture with device soldered to heatsink.

Documentation

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