A2T23H160-24S|Airfast® 28 W, 2300-2400 MHz

For best experience this site requires Javascript to be enabled. To enable on your browser, follow our accessibility instructions.

The A2T23H160-24SR3 28 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 2300 to 2400 MHz.

See product image

Data Sheet

Application Notes

Product Details

Features

Advanced High Performance In-Package Doherty
Greater Negative Gate-Source Voltage Range for Improved Class C Operation
Designed for Digital Predistortion Error Correction Systems
RoHS Compliant

Key Parametrics

Frequency (Min) (MHz)

2300
Frequency (Max) (MHz)

2400
Supply Voltage (Typ) (V)

28
Peak Power (Typ) (dBm)

52.5
Peak Power (Typ) (W)

178
Die Technology

LDMOS

RF Performance Table

2300 MHz

Typical Doherty Single-Carrier W-CDMA Performance: V_DD = 28 Vdc, I_DQA = 350 mA, V_GSB = 0.7 Vdc, Pout = 28 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.

Frequency	G_ps (dB)	η_D (%)	Output PAR (dB)	ACPR (dBc)
2300 MHz	17.7	48.8	7.9	–33.5
2350 MHz	17.7	48.4	8.0	–37.2
2400 MHz	17.8	48.2	7.9	–37.0

Documentation

Quick reference to our documentation types.

4 documents

Clear all

^{Data Sheet}
A2T23H160-24S 2300-2400 MHz, 28 W Avg, 28 V Data Sheet

PDFRev 0Nov 17, 2015460.2 KBA2T23H160-24SEnglish
^{Application Note}
AN1955 - Thermal Measurement Methodology of RF Power Amplifiers - Application Notes

PDFRev 1Apr 29, 2014112.4 KBAN1955English
^{Engineering Bulletin}
Using Data Sheet Impedances for RF LDMOS Devices

PDFRev 0Jan 19, 2004171.0 KBEB212English
^{Package Information}
98ASA00674D, NI-780S-4L2L, 20.57x9.78x3.81, Pitch 8.89, 7 Pins

PDFRev OJan 16, 201457.3 KBSOT1799-3English

Design Resources

Design Files

5 design files

Clear all

^Models
RF High Power Model ADS Model Kit goto: Click the Download button to select.

HTMLRev 1Sep 20, 2016785 BRF_HIGH_POWER_MODEL_ADS_KIT
DownloadToggle Dropdown
- Add to Queue
- Remove from Queue
- Recommended for large file sizes.
- View Queue
^Models
RF High Power Model AWR Model Kit goto: Click the Download button to select.

HTMLRev 1Sep 20, 2016802 BRF_HIGH_POWER_MODEL_AWR_KIT
DownloadToggle Dropdown
- Add to Queue
- Remove from Queue
- Recommended for large file sizes.
- View Queue
^Models
A2T23H160-24S RF High-Power Model ADS Product Model Design Kit

ZIPRev 1Jun 17, 2019911.0 KBA2T23H160_24S_MDL_ADS
DownloadToggle Dropdown
- Add to Queue
- Remove from Queue
- Recommended for large file sizes.
- View Queue
^Models
A2T23H160-24S RF High-Power Model AWR Product Model Design Kit

ZIPRev 0Sep 20, 20162.2 MBA2T23H160_24S_MDL_AWR
DownloadToggle Dropdown
- Add to Queue
- Remove from Queue
- Recommended for large file sizes.
- View Queue
^Calculators
A2T23H160-24S RF Power Electromigration MTTF Calculation Program

XLSXRev 0Aug 23, 201642.1 KBA2T23H160-24S_MTTF_CALC
DownloadToggle Dropdown
- Add to Queue
- Remove from Queue
- Recommended for large file sizes.
- View Queue

2300-2400 MHz, 28 W AVG., 28 V Airfast^® RF Power LDMOS Transistor

Product Details

Features

Key Parametrics

RF Performance Table

2300 MHz

Documentation

Filter by

A2T23H160-24S 2300-2400 MHz, 28 W Avg, 28 V Data Sheet

AN1955 - Thermal Measurement Methodology of RF Power Amplifiers - Application Notes

Using Data Sheet Impedances for RF LDMOS Devices

98ASA00674D, NI-780S-4L2L, 20.57x9.78x3.81, Pitch 8.89, 7 Pins

Design Resources

Design Files

Filter by

RF High Power Model ADS Model Kit goto: Click the Download button to select.

RF High Power Model AWR Model Kit goto: Click the Download button to select.

A2T23H160-24S RF High-Power Model ADS Product Model Design Kit

A2T23H160-24S RF High-Power Model AWR Product Model Design Kit

A2T23H160-24S RF Power Electromigration MTTF Calculation Program

Filter By

Support

What do you need help with?

Suggested Links

2300-2400 MHz, 28 W AVG., 28 V Airfast® RF Power LDMOS Transistor

Product Details

Features

Key Parametrics

RF Performance Table

2300 MHz

Documentation

Filter by

A2T23H160-24S 2300-2400 MHz, 28 W Avg, 28 V Data Sheet

AN1955 - Thermal Measurement Methodology of RF Power Amplifiers - Application Notes

Using Data Sheet Impedances for RF LDMOS Devices

98ASA00674D, NI-780S-4L2L, 20.57x9.78x3.81, Pitch 8.89, 7 Pins

Design Resources

Design Files

Filter by

RF High Power Model ADS Model Kit goto: Click the Download button to select.

RF High Power Model AWR Model Kit goto: Click the Download button to select.

A2T23H160-24S RF High-Power Model ADS Product Model Design Kit

A2T23H160-24S RF High-Power Model AWR Product Model Design Kit

A2T23H160-24S RF Power Electromigration MTTF Calculation Program

Filter By

Support

What do you need help with?

Suggested Links

2300-2400 MHz, 28 W AVG., 28 V Airfast^® RF Power LDMOS Transistor