2496-2690 MHz, 80 W Avg., 48 V Airfast® RF Power GaN Transistor

A3G26H502W17S

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Product Details

Features

  • High terminal impedances for optimal broadband performance
  • Advanced high performance in-package Doherty
  • Improved linearized error vector magnitude with next generation signal
  • Able to withstand extremely high output VSWR and broadband operating conditions
  • RoHs compliant

Key Parametrics

  • Frequency (Min) (MHz)
    2496
  • Frequency (Max) (MHz)
    2690
  • Supply Voltage (Typ) (V)
    48
  • Peak Power (Typ) (dBm)
    57
  • Peak Power (Typ) (W)
    500
  • Die Technology
    GaN

RF Performance Table

2600 MHz

Typical Doherty Single-Carrier W-CDMA Characterization Performance: VDD = 48 Vdc, IDQA = 370 mA, VGSB = -4.6 Vdc, Pout = 80 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. (1)
Frequency Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
2496 MHz14.448.47.8-32.6
2590 MHz15.049.38.2-35.2
2690 MHz14.851.27.8-34.0
1. All data measured in fixture with device soldered to heatsink.

Design Resources

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Documentation

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3 documents

Design Files

4 design files

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