420-851 MHz, 107 W Avg., 48 V Airfast® RF Power LDMOS Transistor

A2V07H400-04N

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Product Details

Features

  • Advanced high performance in-package Doherty
  • Greater negative gate-source voltage range for improved Class C operation
  • Designed for digital predistortion error correction systems
  • RoHS compliant

Key Parametrics

  • Frequency (Min) (MHz)
    420
  • Frequency (Max) (MHz)
    851
  • Supply Voltage (Typ) (V)
    48
  • Peak Power (Typ) (dBm)
    57.3
  • Peak Power (Typ) (W)
    537
  • Die Technology
    LDMOS

RF Performance Table

600 MHz

Typical Doherty Single-Carrier W-CDMA Performance: VDD = 48 Vdc, IDQA = 700 mA, VGSB = 1.3 Vdc, Pout = 107 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.

Frequency Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
595 MHz19.458.46.8–29.8
623 MHz19.959.47.1–30.1
652 MHz19.857.27.1–32.2

460 MHz

Typical Doherty Single-Carrier W-CDMA Performance: VDD = 48 Vdc, IDQA = 400 mA, VGSB = 1.5 Vdc, Pout = 112 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.

Frequency Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
460 MHz17.658.77.1–29.7
465 MHz17.758.77.1–30.6
470 MHz17.957.17.0–32.2

420 MHz

Typical Doherty Single-Carrier W-CDMA Performance: VDD = 48 Vdc, IDQA = 500 mA, VGSB = 1.6 Vdc, Pout = 100 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.

Frequency Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
420 MHz18.853.37.0–27.0
423 MHz18.853.57.0–27.6
425 MHz18.853.37.0–27.6

Design Resources

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Documentation

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5 documents

Design Files

5 design files

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