728-960 MHz, 2 W Avg., 48 V Airfast® RF Power LDMOS Transistor

A2T08VD020N
The A2T08VD020NT1 2 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 728 to 960 MHz.

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Features

  • Greater Negative Gate-Source Voltage Range for Improved Class C Operation
  • On-Chip Matching (50 Ohm Input, DC Blocked)
  • Integrated Quiescent Current Temperature Compensation with Enable/Disable Function
  • Integrated ESD Protection
  • RoHS Compliant

Part numbers include: A2T08VD020N.

RF Performance Tables

900 MHz

Typical Single-Carrier W-CDMA Performance: VDD = 48 Vdc, IDQA = IDQB = 40 mA, Pout = 2 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
Frequency Gps
(dB)		 ηD
(%)		 ACPR
(dBc)
920 MHz19.321.3–43.4
940 MHz19.321.5–43.8
960 MHz19.121.1–43.9

700 MHz

Typical Single-Carrier W-CDMA Performance: VDD = 48 Vdc, IDQA = IDQB = 40 mA, Pout = 2 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
Frequency Gps
(dB)		 ηD
(%)		 ACPR
(dBc)
728 MHz19.218.9–42.3
748 MHz19.219.2–42.6
768 MHz18.918.7–42.6

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