1-2000 MHz, 4 W, 28 V Class A/AB RF Power MOSFET

MMRF1014N

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Product Details

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Features

  • Typical Two-Tone Performance @ 1960 MHz, 28 Vdc, IDQ = 50 mA, Pout = 4 W PEP
    Power Gain: 18 dB
    Drain Efficiency: 33%
    IMD: –34 dBc
  • Typical Two-Tone Performance @ 900 MHz, 28 Vdc, IDQ = 50 mA, Pout = 4 W PEP
    Power Gain: 19 dB
    Drain Efficiency: 33%
    IMD: –39 dBc
  • Capable of Handling 5:1 VSWR @ 28 Vdc, 1960 MHz, 4 W CW Output Power
  • Characterized with Series Equivalent Large-Signal Impedance Parameters
  • On-Chip RF Feedback for Broadband Stability
  • Integrated ESD Protection
  • RoHS Compliant
  • In Tape and Reel. T1 Suffix = 1,000 Units,16 mm Tape Width, 7-inch Reel.

Key Parametrics

  • Frequency (Min) (MHz)
    1
  • Frequency (Max) (MHz)
    2000
  • Supply Voltage (Typ) (V)
    28
  • P1dB (Typ) (dBm)
    36
  • P1dB (Typ) (W)
    4
  • Die Technology
    LDMOS

Documentation

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3 documents

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