1.8-2000 MHz, 100 W, 50 V Broadband RF Power LDMOS Transistors

MRFE6VP100H

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Product Details

Features

  • Wide Operating Frequency Range
  • Very Rugged
  • Unmatched, Capable of Very Broadband Operation
  • Integrated Stability Enhancements
  • Low Thermal Resistance
  • Integrated ESD Protection Circuitry
  • RoHS Compliant
  • In Tape and Reel. R5 Suffix = 50 Units, 56 mm Tape Width, 13 inch Reel.
  • These products are included in Our product longevity program with assured supply for a minimum of 15 years after launch.

Key Parametrics

  • Frequency (Min) (MHz)
    1.8
  • Frequency (Max) (MHz)
    2000
  • Supply Voltage (Typ) (V)
    50
  • P1dB (Typ) (dBm)
    50
  • P1dB (Typ) (W)
    100
  • Die Technology
    LDMOS

RF Performance Tables

30-512 MHz Broadband

VDD = 50 Volts

512 MHz Narrowband

VDD = 50 Volts

Ruggedness, 512 MHz

Documentation

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4 documents

Design Resources

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Design Files

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