960-1215 MHz, 275 W, 50 V Pulse Lateral N-Channel RF Power MOSFETs

MMRF1008H
RF Power transistors, MMRF1008H, MMRF1008HS and MMRF1008GH are designed for applications operating at frequencies from 900 and 1215 MHz. These devices are suitable for use in defense and commercial pulse applications, such as IFF and DME.

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Product Details

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Features

  • Typical Pulse Performance: VDD = 50 Vdc, IDQ = 100 mA, Pout = 275 W Peak (27.5 Watts Avg.), f = 1030 MHz, Pulse Width = 128 µsec, Duty Cycle = 10%
    Power Gain: 20.3 dB
    Drain Efficiency: 65.5%
  • Capable of Handling 10:1 VSWR, @ 50 Vdc, 1030 MHz, 275 W Peak Power
  • Typical Broadband Performance: VDD = 50 Vdc, IDQ = 100 mA, Pout = 250 W Peak (25 Watts Avg.), f = 960–1215 MHz, Pulse Width = 128 µsec, Duty Cycle = 10%
    Power Gain: 19.8 dB
    Drain Efficiency: 58%
  • Characterized with Series Equivalent Large–Signal Impedance Parameters
  • Internally Matched for Ease of Use
  • Qualified Up to a Maximum of 50 VDD Operation
  • Integrated ESD Protection
  • Greater Negative Gate-Source Voltage Range for Improved Class C Operation
  • RoHS Compliant
  • These products are included in Our product longevity program with assured supply for a minimum of 10 years after launch.

Key Parametrics

  • Frequency (Min) (MHz)
    960
  • Frequency (Max) (MHz)
    1215
  • Supply Voltage (Typ) (V)
    50
  • P1dB (Typ) (dBm)
    54.4
  • P1dB (Typ) (W)
    275
  • Die Technology
    LDMOS

Design Resources

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