960-1215 MHz, 500 W, 50 V Pulse RF Power LDMOS Transistors

MRF6V12500H

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Product Details

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Features

  • Characterized with Series Equivalent Large–Signal Impedance Parameters
  • Internally Matched for Ease of Use
  • Qualified Up to a Maximum of 50 VDD Operation
  • Integrated ESD Protection
  • Greater Negative Gate-Source Voltage Range for Improved Class C Operation
  • RoHS Compliant
  • These products are included in our product longevity program with assured supply for a minimum of 10 years after launch.

RF Performance Table

Typical Pulse Performance

VDD = 50 Volts, IDQ = 200 mA 1. Minimum output power for each specified pulse condition.
  • Capable of Handling 10:1 VSWR, @ 50 Vdc, 1030 MHz, 500 Watts Peak Power

Documentation

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1-5 of 9 documents

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Design Resources

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Design Files

5 design files

  • Models

    RF High Power Model ADS Model Kit goto: Click the Download button to select.

  • Models

    RF High Power Model AWR Model Kit goto: Click the Download button to select.

  • Models

    MRF6V12500H, MRF6V12500HS RF High-Power Model AWR Product Model Design Kit

  • Models

    MRF6V12500H, MRF6V12500HS RF High-Power Model ADS Product Model Design Kit

  • Calculators

    MRF6V12500HR5, MRF6V12500HSR5 RF Power Electromigration MTTF Calculation Program

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