MRFE6VS25N|25 W CW, 1.8-2000 MHz, 50 V

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MRFE6VS25NR1 and MRFE6VS25GNR1 are RF power transistors designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to 2000 MHz. These devices are fabricated using Our enhanced ruggedness platform and are suitable for use in applications where high VSWRs are encountered.

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Data Sheet

Application Notes

Product Details

Features

Wide Operating Frequency Range
Extreme Ruggedness
Unmatched, Capable of Very Broadband Operation
Integrated Stability Enhancements
Low Thermal Resistance
Extended ESD Protection Circuit
RoHS Compliant
In Tape and Reel. R1 Suffix = 500 Units, 24 mm Tape Width, 13-inch Reel.
These products are included in Our product longevity program with assured supply for a minimum of 15 years after launch.

Key Parametrics

Frequency (Min) (MHz)

1.8
Frequency (Max) (MHz)

2000
Supply Voltage (Typ) (V)

50
P1dB (Typ) (dBm)

44
P1dB (Typ) (W)

25
Output Power (Typ) (W) @ Intermodulation Level at Test Signal

25.0 @ CW
Test Signal

CW
Power Gain (Typ) (dB) @ f (MHz)

25.5 @ 512
Efficiency (Typ) (%)

74.5, 74.7
Thermal Resistance (Spec) (℃/W)

1.2
Matching

unmatched
Class

AB
Die Technology

LDMOS

RF Performance Tables

VHF-UHF Performance

V_DD = 50 Volts

Frequency (MHz)	Signal Type	Pout (W)	G_ps (dB)	η_D (%)	IMD (dBc)
1.8 to 30	Two-Tone (10 kHz spacing)	25 PEP	25	51	–30
30-512	Two-Tone (200 kHz spacing)	25 PEP	17.1	30.1	–32

512 MHz Narrowband, 1030 MHz Narrowband

V_DD = 50 Volts

Frequency (MHz)	Signal Type	Pout (W)	G_ps (dB)	η_D (%)
512	Pulse (100 µsec, 20% Duty Cycle)	25 Peak	25.4	74.5
512	CW	25	25.5	74.7
1030	CW	25	22.5	60

Ruggedness, 1030 MHz

Frequency (MHz)	Signal Type	VSWR	Pin (W)	Test Voltage	Result
1030	CW	>65:1 at all Phase Angles	0.34 (3 dB Overdrive)	50	No Device Degradation

Design Resources

Documentation

Quick reference to our documentation types.

1-5 of 7 documents

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^{Data Sheet}
MRFE6VS25N 25 W CW, 1.8-2000 MHz, 50 V Data Sheet

PDFRev 2Mar 21, 20191.7 MBMRFE6VS25NEnglish
^{Application Note}
Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages

PDFRev 0Mar 12, 2009449.7 KBAN3789English
^Brochure
RF Solutions for Commercial Aerospace

PDFRev 2Sep 4, 20151.9 MBBR1608English
^{Engineering Bulletin}
Using Data Sheet Impedances for RF LDMOS Devices

PDFRev 0Jan 19, 2004171.0 KBEB212English
^{Package Information}
98ASA99301D, TO, 9.65x6.1x2.11, Pitch 4.98, 3 Pins

PDFRev DMar 30, 201686.0 KBSOT1731-1English
^{Package Information}
98ASH98117A, TO, 9.65x6.1x2.03, Pitch 6.06, 3 Pins

PDFRev RFeb 26, 201691.2 KBSOT1732-1English
^{White Paper}
Designing with Plastic RF Power Transistors White Paper

PDFRev 2Sep 24, 2015894.1 KBRFPLASTICWPEnglish

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Design Files

1-5 of 13 design files

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^Models
RF High Power Model ADS Model Kit goto: Click the Download button to select.

HTMLRev 1Sep 20, 2016785 BRF_HIGH_POWER_MODEL_ADS_KIT
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^Models
MRFE6VS25N RF High-Power Model ADS Product Model Design Kit

ZIPRev 2Jun 17, 2019149.8 KBMRFE6VS25N_MDL_ADS
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^Models
MRFE6VS25NR1 RF High-Power Model AWR Product Model Design Kit.

ZIPRev 0Feb 8, 2013171.2 KBMRFE6VS25N_MDL_AWR
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RF High Power Model AWR Model Kit goto: Click the Download button to select.

HTMLRev 1Sep 20, 2016802 BRF_HIGH_POWER_MODEL_AWR_KIT
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MRFE6VS25NR1 S-Parameters

S2PRev 0Jun 5, 201226.1 KBMRFE6VS25N_SP
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^{Printed Circuit Boards and Schematics}
MRFE6VS25N 30-512 MHz Broadband PCB DXF file

ZIPRev 0Dec 20, 2012394.4 KBMRFE6VS25N_30_512_PCB
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MRFE6VS25N 1.8-30 MHz Broadband PCB DXF file

ZIPRev 0Dec 20, 2012346.9 KBMRFE6VS25N_1.8_30_PCB
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MRFE6VS25N 1030 MHz Narrowband PCB DXF file

ZIPRev 0Dec 20, 201246.2 KBMRFE6VS25N_1030NB_PCB
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MRFE6VS25N 30-520 MHz Reference Circuit Design Files

ZIPRev 0Sep 28, 20192.5 MBMRFE6VS25N-30-520-MHz-Reference-Circuit
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MRFE6VS25GN 960-1215 MHz Reference Circuit Design Files

ZIPRev 0Sep 28, 2019875.2 KBMRFE6VS25GN-960-1215-MHz-Reference-Circuit
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^{Printed Circuit Boards and Schematics}
MRFE6VS25N 1.8-30 MHz Reference Circuit Design Files

ZIPRev 0Sep 28, 20192.4 MBMRFE6VS25N-1.8-30-MHz-Reference-Circuit
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^{Printed Circuit Boards and Schematics}
MRFE6VS25N 512 MHz Narrowband PCB DXF file

ZIPRev 1Jun 5, 2012299.7 KBMRFE6VS25N_512NB_PCB
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^Calculators
MRFE6VS25NR1 RF Power Electromigration MTTF Calculation Program

XLSXRev 0Jun 5, 201230.7 KBMRFE6VS25N_MTTF_CALC
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1.8-2000 MHz, 25 W, 50 V Wideband RF Power LDMOS Transistors

Product Details

Features

Key Parametrics

RF Performance Tables

VHF-UHF Performance

512 MHz Narrowband, 1030 MHz Narrowband

Ruggedness, 1030 MHz

Design Resources

Documentation

Filter by

MRFE6VS25N 25 W CW, 1.8-2000 MHz, 50 V Data Sheet

Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages

RF Solutions for Commercial Aerospace

Using Data Sheet Impedances for RF LDMOS Devices

98ASA99301D, TO, 9.65x6.1x2.11, Pitch 4.98, 3 Pins

98ASH98117A, TO, 9.65x6.1x2.03, Pitch 6.06, 3 Pins

Designing with Plastic RF Power Transistors White Paper

Design Files

Filter by

RF High Power Model ADS Model Kit goto: Click the Download button to select.

MRFE6VS25N RF High-Power Model ADS Product Model Design Kit

MRFE6VS25NR1 RF High-Power Model AWR Product Model Design Kit.

RF High Power Model AWR Model Kit goto: Click the Download button to select.

MRFE6VS25NR1 S-Parameters

MRFE6VS25N 30-512 MHz Broadband PCB DXF file

MRFE6VS25N 1.8-30 MHz Broadband PCB DXF file

MRFE6VS25N 1030 MHz Narrowband PCB DXF file

MRFE6VS25N 30-520 MHz Reference Circuit Design Files

MRFE6VS25GN 960-1215 MHz Reference Circuit Design Files

MRFE6VS25N 1.8-30 MHz Reference Circuit Design Files

MRFE6VS25N 512 MHz Narrowband PCB DXF file

MRFE6VS25NR1 RF Power Electromigration MTTF Calculation Program

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