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1090 MHz, 10 W, 50 V Pulsed Lateral N-Channel RF Power MOSFET
MRF6V10010N Receive alerts
The MRF6V10010NR4 is an RF Power transistor designed for applications operating at frequencies between 960 and 1400 MHz, 1% to 20% duty cycle. This device is suitable for use in pulsed applications.
RF ISO 466 image
Product Details
Features
- Typical Pulsed Performance: VDD = 50 Volts, IDQ = 10 mA, Pout = 10 Watts Peak (2 W Avg.), f = 1090 MHz, Pulse Width = 100 µsec, Duty Cycle = 20%
- Power Gain: 25 dB
- Drain Efficiency: 69%
- Characterized with Series Equivalent Large–Signal Impedance Parameters
- Qualified Up to a Maximum of 50 VDD Operation
- Integrated ESD Protection
- Greater Negative Gate-Source Voltage Range for Improved Class C Operation
- RoHS Compliant
- In Tape and Reel. R4 Suffix = 100 Units per 12 mm, 7 inch Reel.
Key Parametrics
-
- Frequency (Min) (MHz)
- 960
-
- Frequency (Max) (MHz)
- 1400
-
- Supply Voltage (Typ) (V)
- 50
-
- P1dB (Typ) (dBm)
- 40
-
- P1dB (Typ) (W)
- 10
-
- Die Technology
- LDMOS
Design Resources
Design Files
1 design file
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Calculators
MRF6V10010NR4 RF Power Electromigration MTTF Calculation Program