SiGe:C Low-Noise Amplifier MMIC with Bypass Switch for LTE

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Features

  • Operating frequency from 2300 MHz to 2690 MHz
  • Noise figure (NF) = 1.0 dB
  • Gain 12.5 dB
  • Bypass switch insertion loss of 2.3 dB
  • High input 1 dB compression point of -1.5 dBm
  • High in band IP3i of 4 dBm
  • Supply voltage 1.5 V to 3.1 V
  • Self shielding package concept
  • Integrated supply decoupling capacitor
  • Optimized performance at a supply current of 5.8 mA
  • Power-down mode current consumption < 1 µA
  • Integrated temperature stabilized bias for easy design
  • Require only one input matching inductor
  • Input and output DC decoupled
  • ESD protection on all pins (HBM > 2 kV)
  • Integrated matching for the output
  • Available in 6-pins leadless package 1.1 mm x 0.7 mm x 0.37 mm; 0.4 mm pitch: SOT1232
  • 180 GHz transit frequency - SiGe:C technology
  • Moisture sensitivity level of 1

Target Applications

  • LNA for LTE reception in smart phones, feature phones, tablet PCs and RF front-end modules

Documentation

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4 documents

Design Resources

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Hardware

2 hardware offerings

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