2450 MHz, 12.5 W CW, 28 V RF LDMOS Integrated Power Amplifier

MHT2012N

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Product Details

Features

  • High gain simplifies layout and reduced PCB area compared to a discrete design
  • Qualified up to a maximum of 32 VDD operation
  • On-chip input and interstage matching (50 ohm input)
  • Integrated quiescent current temperature compensation with enable/disable function
  • Integrated ESD protection
  • 150°C case and junction temperature ratinge
  • Ideal as a driver for high power RF energy applications
  • RoHS compliant
  • Driver for consumer and commercial cooking applications
  • Driver for industrial heating applications, such as sterilization, pasteurization, drying, moisture-leveling process, curing and welding
  • Driver for medical applications, such as microwave ablation, renal denervation and diathermy
  • Final stage for portable heating devices and portable medical systems

Key Parametrics

  • Frequency (Min) (MHz)
    2400
  • Frequency (Max) (MHz)
    2500
  • Supply Voltage (Typ) (V)
    28
  • P1dB (Typ) (dBm)
    41
  • P1dB (Typ) (W)
    12.5
  • Output Power (Typ) (W) @ Intermodulation Level at Test Signal
    12.5 @ CW
  • Test Signal
    CW
  • Power Gain (Typ) (dB) @ f (MHz)
    30 @ 2450
  • Efficiency (Typ) (%)
    51.4
  • Thermal Resistance (Spec) (℃/W)
    4.3
  • Matching
    input impedance matching
  • Class
    AB
  • Die Technology
    LDMOS

RF Performance Table

Typical Performance

VDD = 28 Vdc, Pin = 11 dBm, IDQ1 = 15 mA, IDQ2 = 75 mA
Frequency
(MHz)
Signal Type Gps
(dB)
PAE
(%)
Pout
(W)
2400CW30.151.313.0
245030.051.412.7
250029.750.511.7

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