300 W CW over 2400-2500 MHz, 50 V RF Power GaN Transistor

MHTG1200HS

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Product Details

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Features

  • Characterized with series equivalent large-signal impedance parameters and common source S-parameters
  • Internally matched for ease of use
  • Qualified for operation at 55 Vdc
  • Integrated ESD protection
  • 150°C case operating temperature
  • 225°C die temperature capability
  • RoHS Compliant
  • Consumer cooking
  • Commercial cooking

RF Performance Tables

Typical Performance

In 2400-2500 MHz MHTG1200HS reference circuit, VDD = 48 Vdc, VGS(A+B) = –5 Vdc (1)
Frequency
(MHz)
Signal Type Pin
(W)
Pout
(W)
Gps
(dB)
ηD
(%)
2400CW10.033615.370.4
245010.033215.273.0
250010.030714.974.4
1. All data measured in fixture with device soldered to heatsink.

Load Mismatch/Ruggedness

Frequency
(MHz)
Signal Type VSWR Pin
(W)
Test
Voltage
Result
2450Pulse
(100 µsec, 20% Duty Cycle)
> 20:1
at All Phase Angles
12.6 Peak55No Device Degradation

Documentation

Quick reference to our documentation types.

5 documents

Design Resources

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Hardware

1 hardware offering

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    Block Diagram

    RF Cooking

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