NPN Wideband Silicon RF Transistor

BFU580

NPN silicon microwave transistor for high speed, medium power applications in a plastic, 4-pin SOT223 package.

The BFU580G is part of the BFU5 family of transistors, suitable for small signal to medium power applications up to 2 GHz.

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Product Details

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Features

  • Low noise, high linearity, high breakdown RF transistor
  • AEC-Q101 qualified
  • Minimum noise figure (NFmin) = 0.75 dB at 900 MHz
  • Maximum stable gain 15.5 dB at 900 MHz
  • 11 GHz fT silicon technology

Target Applications

  • Applications requiring high supply voltages and high breakdown voltages
  • Broadband amplifiers up to 2 GHz
  • Low noise, high linearity amplifiers for ISM applications
  • Automotive applications (e.g., antenna amplifiers)

Design Resources

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Design Files

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3 design files

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