1.8-600 MHz, 300 W CW, 50 V Wideband RF Power LDMOS Transistors

MRFE6VP5300N

See product image

Product Details

Features

  • Wide Operating Frequency Range
  • Extreme Ruggedness
  • Unmatched Input and Output Allowing Wide Frequency Range Utilization
  • Integrated Stability Enhancements
  • Low Thermal Resistance
  • Integrated ESD Protection Circuitry
  • RoHS Compliant
  • In Tape and Reel. R1 Suffix = 500 Units, 44 mm Tape Width, 13-inch Reel.

Key Parametrics

  • Frequency (Min) (MHz)
    1.8
  • Frequency (Max) (MHz)
    600
  • Supply Voltage (Typ) (V)
    50
  • P1dB (Typ) (dBm)
    54.8
  • P1dB (Typ) (W)
    300
  • Output Power (Typ) (W) @ Intermodulation Level at Test Signal
    300.0 @ CW
  • Test Signal
    CW
  • Power Gain (Typ) (dB) @ f (MHz)
    25.0 @ 230
  • Efficiency (Typ) (%)
    70
  • Thermal Resistance (Spec) (℃/W)
    0.22
  • Matching
    unmatched
  • Class
    AB
  • Die Technology
    LDMOS

RF Performance Tables

87.5-108 MHz Broadband

VDD = 50 Vdc

230 MHz Narrowband

VDD = 50 Vdc

Ruggedness

1. Measured in 87.5-108 MHz broadband reference circuit.
2. Measured in 230 MHz narrowband test circuit.
3. The values shown are the minimum measured performance numbers across the indicated frequency range.

Design Resources

Select a section:

Documentation

Quick reference to our documentation types.

5 documents

Design Files

1-5 of 6 design files

Show All

Support

What do you need help with?