1500 W CW over 1.8-500 MHz, 50 V Wideband RF Power LDMOS Transistor

MRF1K50H

Roll over image to zoom in

Product Details

Features

  • High Drain-source Avalanche Energy Absorption Capability
  • Unmatched Input and Output
  • Device Can Be Used Single-Ended or in a Push-Pull Configuration
  • Characterized from 30 to 50 V
  • High Rugggedness. Handles 65:1 VSWR.
  • This product is included in our product longevity program with assured supply for a minimum of 15 years after launch.
  • RoHS Compliant
  • Recommended Driver: MRFE6VS25N (25 W)
  • Lower Thermal Resistance Part Available: MRF1K50N
  • Industrial, Scientific, Medical (ISM)
    • Laser generation
    • Plasma etching
    • Particle accelerators
    • MRI, diathermy, skin laser and ablation
    • Industrial heating, welding and drying systems
  • Broadcast
    • Radio broadcast
    • VHF TV broadcast
  • Aerospace
    • VHF omnidirectional range (VOR)
    • HF and VHF communications
    • Weather radar
  • Mobile Radio
    • VHF and UHF base stations

Key Parametrics

  • Frequency (Min) (MHz)
    1.8
  • Frequency (Max) (MHz)
    500
  • Supply Voltage (Typ) (V)
    50
  • P1dB (Typ) (dBm)
    61.8
  • P1dB (Typ) (W)
    1500
  • Die Technology
    LDMOS

RF Performance Table

Typical Performance

VDD = 50 Vdc
Frequency
(MHz)
Signal Type Pout
(W)
Gps
(dB)
ηD
(%)
27CW1550 CW25.978.3
81.36(1)CW1400 CW23.075.0
87.5-108(2,3)CW1475 CW23.383.4
230(4)Pulse
(100 µsec, 20% Duty Cycle)
1500 Peak23.774.0
1. Data from 81.36 MHz narrowband reference circuit.
2. Data from 87.5-108 MHz broadband reference circuit.
3. The values shown are the center band performance numbers across the indicated frequency range.
4. Data from 230 MHz narrowband production test fixture.

Documentation

Quick reference to our documentation types.

1-5 of 6 documents

Show All

Design Resources

Select a section:

Design Files

1-5 of 16 design files

Show All

Support

What do you need help with?