1800 W CW over 1.8-400 MHz, 65 V Wideband RF Power LDMOS Transistor

MRFX1K80N

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The MRFX1K80N is the over-molded plastic version of MRFX1K80H and enables a 30% lower thermal resistance. It is based on NXP's new 65 V LDMOS technology that focuses on ease of use. This high ruggedness transistor is designed for use in high VSWR industrial, scientific and medical applications, as well as radio and VHF TV broadcast, sub-GHz aerospace and mobile radio applications. Its unmatched input and output design allows for wide frequency range use from 1.8 to 400 MHz.

Product Details

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Features

  • Low thermal resistance version of MRFX1K80H using NXP's OM-1230 over-molded plastic package
  • Based on new 65 V LDMOS technology, designed for ease of use
  • Characterized from 30 to 65 V for extended power range
  • Unmatched input and output
  • High breakdown voltage for enhanced reliability and higher efficiency architectures
  • High drain-source avalanche energy absorption capability
  • High ruggedness. Handles 65:1 VSWR.
  • RoHS compliant
  • This product is included in our product longevity program with assured supply for a minimum of 15 years after launch.
  • Industrial, scientific, medical (ISM)
    • Laser generation
    • Plasma generation
    • Particle accelerators
    • MRI, RF ablation and skin treatment
    • Industrial heating, welding and drying systems
  • Radio and VHF TV broadcast
  • Aerospace
    • HF communications
    • Radar

Key Parametrics

  • Frequency (Min) (MHz)
    1.8
  • Frequency (Max) (MHz)
    400
  • Supply Voltage (Typ) (V)
    65
  • P1dB (Typ) (dBm)
    62.6
  • P1dB (Typ) (W)
    1800
  • Test Signal
    Pulse
  • Power Gain (Typ) (dB) @ f (MHz)
    24.4 @ 230
  • Efficiency (Typ) (%)
    75.7
  • Thermal Resistance (Spec) (℃/W)
    0.06
  • Matching
    unmatched
  • Class
    AB
  • Die Technology
    LDMOS

RF Performance Tables

Typical Performance

Frequency
(MHz)		 Signal Type VDD
(V)		 Pout
(W)		 Gps
(dB)		 ηD
(%)
87.5-108 (1,2)CW601670 CW23.883.5
230 (3)Pulse
(100 µsec, 20% Duty Cycle)		651800 Peak24.475.7

Load Mismatch/Ruggedness

Frequency
(MHz)		 Signal Type VSWR Pin
(W)		 Test
Voltage		 Result
230(3) Pulse
(100 µsec, 20% Duty Cycle)		 > 65:1 at all Phase Angles 14 Peak
(3 dB Overdrive)		 65 No Device Degradation
1. Measured in 87.5-108 MHz broadband reference circuit.
2. The values shown are the center band performance numbers across the indicated frequency range.
3. Measured in 230 MHz narrowband production test fixture.

Design Resources

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