300 W CW over 2400-2500 MHz, 50 V RF Power GaN Transistor

MRF24G300HS

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Product Details

Features

  • Advanced GaN on SiC, for optimal thermal performance
  • Characterized for CW, long pulse (up to several seconds) and short pulse operations
  • Device can be used in a single-ended or push-pull configuration
  • Input matched for simplified input circuitry
  • Qualified up to 55 V
  • Suitable for linear application
  • RoHS Compliant
  • Industrial heating
  • Welding and heat sealing
  • Plasma generation
  • Lighting
  • Scientific instrumentation
  • Medical
    • Microwave ablation
    • Diathermy

Key Parametrics

  • Frequency (Min) (MHz)
    2400
  • Frequency (Max) (MHz)
    2500
  • Supply Voltage (Typ) (V)
    50
  • P1dB (Typ) (dBm)
    54.8
  • P1dB (Typ) (W)
    300
  • Die Technology
    GaN

RF Performance Tables

Typical Performance

In 2400-2500 MHz MRF24G300HS reference circuit, VDD = 48 Vdc, VGS(A+B) = –5 Vdc (1)
Frequency
(MHz)
Signal Type Pin
(W)
Pout
(W)
Gps
(dB)
ηD
(%)
2400CW10.033615.370.4
245010.033215.273.0
250010.030714.974.4
1. All data measured in fixture with device soldered to heatsink.

Load Mismatch/Ruggedness

Frequency
(MHz)
Signal Type VSWR Pin
(W)
Test
Voltage
Result
2450Pulse
(100 µsec, 20% Duty Cycle)
> 20:1
at All Phase Angles
12.6 Peak55No Device Degradation

Documentation

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Design Resources

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Design Files

2 design files

  • Models

    MRF24G300HS S-Parameters

  • Printed Circuit Boards and Schematics

    MRF24G300HS 2400-2500 MHz Reference Circuit Design Files

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