700-1300 MHz, 350 W CW, 50 V RF Power LDMOS Transistors

MRF8VP13350N

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Product Details

Features

  • Internally input matched for ease of use
  • Device can be used single-ended or in a push-pull configuration
  • Qualified up to a maximum of 50 VDD operation
  • Suitable for linear application with appropriate biasing
  • Integrated ESD protection
  • RoHS Compliant
  • 915 MHz industrial heating/welding systems
  • 1300 MHz particle accelerators
  • 900 MHz TETRA base stations

Key Parametrics

  • Frequency (Min) (MHz)
    700
  • Frequency (Max) (MHz)
    1300
  • Supply Voltage (Typ) (V)
    50
  • P1dB (Typ) (dBm)
    55.4
  • P1dB (Typ) (W)
    350
  • Output Power (Typ) (W) @ Intermodulation Level at Test Signal
    350.0 @ CW
  • Test Signal
    CW
  • Power Gain (Typ) (dB) @ f (MHz)
    20.7 @ 915
  • Efficiency (Typ) (%)
    67.5
  • Thermal Resistance (Spec) (℃/W)
    0.040000003
  • Matching
    input impedance matching
  • Class
    AB
  • Die Technology
    LDMOS

RF Performance Tables

1300 MHz

VDD = 50 Vdc

915 MHz

In 915 MHz reference circuit, VDD = 48 Vdc

Load Mismatch/Ruggedness

1. Measured in 1300 MHz pulse narrowband test circuit.

Design Resources

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Design Files

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