MMRF1317H: 1030-1090 MHz, 1300 W Peak, 50 V RF Power LDMOS Transistors
Key Parametrics
-
- Frequency (Min) (MHz)
- 1030
-
- Frequency (Max) (MHz)
- 1090
-
- Supply Voltage (Typ) (V)
- 50
-
- P1dB (Typ) (dBm)
- 61.1
-
- P1dB (Typ) (W)
- 1300
-
- Output Power (Typ) (W) @ Intermodulation Level at Test Signal
- 1500.0 @ Peak
-
- Test Signal
- Pulse
-
- Power Gain (Typ) (dB) @ f (MHz)
- 18.9 @ 1030
-
- Efficiency (Typ) (%)
- 56
-
- Thermal Resistance (Spec) (℃/W)
- 0.019
-
- Matching
- input and output impedance matching
-
- Class
- AB
-
- Die Technology
- LDMOS
.
RF Performance Tables
Typical Performance
In 1030, 1090 MHz reference circuit, VDD = 50 Vdc, IDQ(A+B) = 100 mA| Frequency (MHz) |
Signal Type | Pout (W) |
Gps (dB) |
ηD (%) |
| 1030(1) | Pulse (128 µsec, 10% Duty Cycle) | 1300 Peak | 18.9 | 56.0 |
| 1090(1) | 1100 Peak | 18.8 | 57.9 |
Typical Narrowband Performance
VDD = 50 Vdc, IDQ(A+B) = 100 mA| Frequency (MHz) |
Signal Type | Pout (W) |
Gps (dB) |
ηD (%) |
| 1030(2) | Pulse (128 µsec, 10% Duty Cycle) | 1300 Peak | 18.2 | 58.1 |
Load Mismatch/Ruggedness
| Frequency (MHz) |
Signal Type | VSWR | Pin (W) |
Test Voltage |
Result |
| 1030(2) | Pulse (128 µsec, 10% Duty Cycle) | > 10:1 at all Phase Angles | 40 (3 dB Overdrive) | 50 | No Device Degradation |
2. Measured in 1030 MHz narrowband test circuit.