1030-1090 MHz, 250 W Peak, 50 V RF LDMOS Integrated Power Amplifiers

MMRF2010N

See product image

Product Details

Features

  • Characterized over 1030-1090 MHz
  • On-chip input (50 Ohm) and interstage matching
  • Single ended
  • Integrated ESD protection
  • Low thermal resistance
  • Integrated quiescent current temperature compensation with enable/disable function
  • RoHS Compliant
  • Driver PA for high power pulse applications
  • IFF and secondary radar

Part numbers include: MMRF2010GN, MMRF2010N.

Key Parametrics

  • Frequency (Min) (MHz)
    1030
  • Frequency (Max) (MHz)
    1090
  • Supply Voltage (Typ) (V)
    50
  • P1dB (Typ) (dBm)
    54
  • P1dB (Typ) (W)
    250
  • Die Technology
    LDMOS

RF Performance Tables

Typical Wideband Performance

(52 Vdc, TA = 25°C)
Frequency
(MHz)(1)
Signal Type Pout
(W)
Gps
(dB)
2nd Stage Eff.
(%)
1030Pulse
(128 µsec, 10% Duty Cycle)
250 Peak34.161.0
109033.461.9
1030Pulse
(2 msec, 20% Duty Cycle)
250 Peak33.661.5
109032.662.9

Narrowband Performance

(50 Vdc, TA = 25°C)
Frequency
(MHz)
Signal Type Pout
(W)
Gps
(dB)
2nd Stage Eff.
(%)
1090(2)Pulse
(128 µsec, 10% Duty Cycle)
250 Peak32.161.4

Load Mismatch/Ruggedness

Frequency
(MHz)
Signal Type VSWR Pin
(W)
Test Voltage Result
1090(1)Pulse
(2 msec, 20% Duty Cycle)
> 20:1 at all Phase Angles 0.316 W Peak
(3 dB Overdrive)
52No Device Degradation
1. Measured in 1030-1090 MHz reference circuit.
2. Measured in 1090 MHz narrowband test circuit.

Documentation

Quick reference to our documentation types.

1-5 of 9 documents

Show All

Support

What do you need help with?