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AFIC10275N
AFV10700H
AFV121KH
MMRF1007H
MMRF1008H
MMRF1009H
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MMRF1304L
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MRF6VP121KH
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MMRF1009H
MMRF1009H: 960-1215 MHz, 500 W, 50 V Pulse Lateral N-Channel RF Power MOSFETs
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Overview
Documentation
Buy/Parametrics
Package/Quality
Overview
RF Power transistors, MMRF1009HR5 and MMRF1009HSR5, are designed for applications operating at frequencies between 960 and 1215 MHz. These devices are suitable for use in pulse applications.
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Features
Characterized with Series Equivalent Large-Signal Impedance Parameters
Internally Matched for Ease of Use
Qualified Up to a Maximum of 50 V
DD
Operation
Integrated ESD Protection
Greater Negative Gate-Source Voltage Range for Improved Class C Operation
RoHS Compliant
In Tape and Reel. R5 Suffix = 50 Units, 56 mm Tape Width, 13-inch Reel.
These products are included in Our
product longevity program
with assured supply for a minimum of 10 years after launch.
More
Less
Features
Characterized with Series Equivalent Large-Signal Impedance Parameters
Internally Matched for Ease of Use
Qualified Up to a Maximum of 50 V
DD
Operation
Integrated ESD Protection
Greater Negative Gate-Source Voltage Range for Improved Class C Operation
RoHS Compliant
In Tape and Reel. R5 Suffix = 50 Units, 56 mm Tape Width, 13-inch Reel.
These products are included in Our
product longevity program
with assured supply for a minimum of 10 years after launch.
Data Sheets
Application Notes
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NI-780H-2L, NI-780S-2L Package Image
NI-780H-2L, NI-780S-2L Package Image
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NI-780H-2L, NI-780S-2L Package Image
Key Parametrics
Frequency (Min) (MHz)
960
Frequency (Max) (MHz)
1215
Supply Voltage (Typ) (V)
50
P1dB (Typ) (dBm)
57
P1dB (Typ) (W)
500
Output Power (Typ) (W) @ Intermodulation Level at Test Signal
500.0 @ Peak
Test Signal
Pulse
Power Gain (Typ) (dB) @ f (MHz)
19.7 @ 1030
Efficiency (Typ) (%)
62
Thermal Resistance (Spec) (℃/W)
0.044
Matching
input and output impedance matching
Class
AB
Die Technology
LDMOS
.
RF Performance Table
Typical Pulse Performance
V
DD
= 50 Vdc, I
DQ
= 200 mA, Pulse Width = 128 µsec, Duty Cycle = 10%
Application
Pout
(W)
f
(MHz)
G
ps
(dB)
η
D
(%)
Narrowband
500 Peak
1030
19.7
62.0
Broadband
500 Peak
960-1215
18.5
57.0
Capable of Handling 10:1 VSWR, @ 50 Vdc, 1030 MHz, 500 W Peak Power