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AFIC10275N
AFV10700H
AFV121KH
MMRF1007H
MMRF1008H
MMRF1009H
MMRF1014N
MMRF1304L
MMRF1304N
MMRF1312H
MMRF1317H
MMRF2010N
MRF6V10010N
MRF6V12250H
MRF6V12500H
MRF6V13250H
MRF6VP121KH
MRFE6VP100H
MRFE6VS25L
MRFE6VS25N
MRF6VP121KH
MRF6VP121KH: 965-1215 MHz, 1000 W, 50 V Lateral N-Channel Broadband RF Power MOSFETs
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Overview
RF Power transistors, MRF6VP121KHR6 and MRF6VP121KHSR6, are designed for applications operating at frequencies between 965 and 1215 MHz. These devices are suitable for use in pulsed applications.
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Features
Typical Pulsed Performance: V
DD
= 50 Volts, I
DQ
= 150 mA, Pout = 1000 Watts Peak (100 W Avg.), f = 1030 MHz, Pulse Width = 128 µsec, Duty Cycle = 10%
Power Gain: 20 dB
Drain Efficiency: 56%
Capable of Handling 5:1 VSWR, @ 50 Vdc, 1030 MHz, 1000 Watts Peak Power
Characterized with Series Equivalent Large–Signal Impedance Parameters
Internally Matched for Ease of Use
Qualified Up to a Maximum of 50 V
DD
Operation
Integrated ESD Protection
Designed for Push-Pull Operation
Greater Negative Gate-Source Voltage Range for Improved Class C Operation
RoHS Compliant
In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel
These products are included in Our
product longevity program
with assured supply for a minimum of 10 years after launch.
NOTE: PARTS ARE PUSH–PULL
More
Less
Features
Typical Pulsed Performance: V
DD
= 50 Volts, I
DQ
= 150 mA, Pout = 1000 Watts Peak (100 W Avg.), f = 1030 MHz, Pulse Width = 128 µsec, Duty Cycle = 10%
Power Gain: 20 dB
Drain Efficiency: 56%
Capable of Handling 5:1 VSWR, @ 50 Vdc, 1030 MHz, 1000 Watts Peak Power
Characterized with Series Equivalent Large–Signal Impedance Parameters
Internally Matched for Ease of Use
Qualified Up to a Maximum of 50 V
DD
Operation
Integrated ESD Protection
Designed for Push-Pull Operation
Greater Negative Gate-Source Voltage Range for Improved Class C Operation
RoHS Compliant
In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel
These products are included in Our
product longevity program
with assured supply for a minimum of 10 years after launch.
NOTE: PARTS ARE PUSH–PULL
Data Sheets
Application Notes
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Key Parametrics
Frequency (Min) (MHz)
965
Frequency (Max) (MHz)
1215
Supply Voltage (Typ) (V)
50
P1dB (Typ) (dBm)
60
P1dB (Typ) (W)
1000
Output Power (Typ) (W) @ Intermodulation Level at Test Signal
1000.0 @ Peak
Test Signal
Pulse
Power Gain (Typ) (dB) @ f (MHz)
20.0 @ 1030
Efficiency (Typ) (%)
56
Thermal Resistance (Spec) (℃/W)
0.02
Matching
unmatched
Class
AB
Die Technology
LDMOS
.