MRF6VP121KH|1000 W Pulse, 965-1215 MHz, 50 V

Overview

RF Power transistors, MRF6VP121KHR6 and MRF6VP121KHSR6, are designed for applications operating at frequencies between 965 and 1215 MHz. These devices are suitable for use in pulsed applications.

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Features

Typical Pulsed Performance: V_DD = 50 Volts, I_DQ = 150 mA, Pout = 1000 Watts Peak (100 W Avg.), f = 1030 MHz, Pulse Width = 128 µsec, Duty Cycle = 10%
Power Gain: 20 dB
Drain Efficiency: 56%
Capable of Handling 5:1 VSWR, @ 50 Vdc, 1030 MHz, 1000 Watts Peak Power
Characterized with Series Equivalent Large–Signal Impedance Parameters
Internally Matched for Ease of Use
Qualified Up to a Maximum of 50 V_DD Operation
Integrated ESD Protection
Designed for Push-Pull Operation
Greater Negative Gate-Source Voltage Range for Improved Class C Operation
RoHS Compliant
In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel
These products are included in Our product longevity program with assured supply for a minimum of 10 years after launch.

NOTE: PARTS ARE PUSH–PULL

MoreLess

Features

Typical Pulsed Performance: V_DD = 50 Volts, I_DQ = 150 mA, Pout = 1000 Watts Peak (100 W Avg.), f = 1030 MHz, Pulse Width = 128 µsec, Duty Cycle = 10%
Power Gain: 20 dB
Drain Efficiency: 56%
Capable of Handling 5:1 VSWR, @ 50 Vdc, 1030 MHz, 1000 Watts Peak Power
Characterized with Series Equivalent Large–Signal Impedance Parameters
Internally Matched for Ease of Use
Qualified Up to a Maximum of 50 V_DD Operation
Integrated ESD Protection
Designed for Push-Pull Operation
Greater Negative Gate-Source Voltage Range for Improved Class C Operation
RoHS Compliant
In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel
These products are included in Our product longevity program with assured supply for a minimum of 10 years after launch.