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MMRF1015N: 1-2000 MHz, 10 W, 28 V Class A/AB RF Power MOSFETs

Overview

The MMRF1015NR1 and MMRF1015GNR1 are designed for Class A or Class AB power amplifier applications with frequencies up to 2000 MHz. Suitable for analog and digital modulation and multicarrier amplifier applications.

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Features

Typical Two-Tone Performance @ 960 MHz, V_DD = 28 Vdc, I_DQ = 125 mA, Pout = 10 W PEP

Power Gain: 18 dB

Drain Efficiency: 32%

IMD: –37 dBc
Capable of Handling 10:1 VSWR @ 28 Vdc, 960 MHz, 10 W CW Output Power
Characterized with Series Equivalent Large-Signal Impedance Parameters
On-Chip RF Feedback for Broadband Stability
Qualified Up to a Maximum of 32 V_DD Operation
Integrated ESD Protection
225°C Capable Plastic Package
RoHS Compliant.
In Tape and Reel. R1 Suffix = 500 Units, 24 mm Tape Width, 13-inch Reel.

MoreLess

Features

Typical Two-Tone Performance @ 960 MHz, V_DD = 28 Vdc, I_DQ = 125 mA, Pout = 10 W PEP

Power Gain: 18 dB

Drain Efficiency: 32%

IMD: –37 dBc
Capable of Handling 10:1 VSWR @ 28 Vdc, 960 MHz, 10 W CW Output Power
Characterized with Series Equivalent Large-Signal Impedance Parameters
On-Chip RF Feedback for Broadband Stability
Qualified Up to a Maximum of 32 V_DD Operation
Integrated ESD Protection
225°C Capable Plastic Package
RoHS Compliant.
In Tape and Reel. R1 Suffix = 500 Units, 24 mm Tape Width, 13-inch Reel.

Data Sheets

Application Notes

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TO-270-2, TO-270G-2 Package Image

TO-270-2, TO-270G-2 Package Image

TO-270-2, TO-270G-2 Package Image

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Key Parametrics

Frequency (Min) (MHz)

1
Frequency (Max) (MHz)

2000
Supply Voltage (Typ) (V)

28
P1dB (Typ) (dBm)

40
P1dB (Typ) (W)

10
Output Power (Typ) (W) @ Intermodulation Level at Test Signal

10.0 @ PEP
Test Signal

2-TONE
Power Gain (Typ) (dB) @ f (MHz)

18.0 @ 960
Efficiency (Typ) (%)

32
Thermal Resistance (Spec) (℃/W)

2.85
Matching

unmatched
Class

A, AB
Die Technology

LDMOS