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MMRF1015N
MMRF1015N: 1-2000 MHz, 10 W, 28 V Class A/AB RF Power MOSFETs
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Overview
Documentation
Buy/Parametrics
Package/Quality
Overview
The MMRF1015NR1 and MMRF1015GNR1 are designed for Class A or Class AB power amplifier applications with frequencies up to 2000 MHz. Suitable for analog and digital modulation and multicarrier amplifier applications.
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Features
Typical Two-Tone Performance @ 960 MHz, V
DD
= 28 Vdc, I
DQ
= 125 mA, Pout = 10 W PEP
Power Gain: 18 dB
Drain Efficiency: 32%
IMD: –37 dBc
Capable of Handling 10:1 VSWR @ 28 Vdc, 960 MHz, 10 W CW Output Power
Characterized with Series Equivalent Large-Signal Impedance Parameters
On-Chip RF Feedback for Broadband Stability
Qualified Up to a Maximum of 32 V
DD
Operation
Integrated ESD Protection
225°C Capable Plastic Package
RoHS Compliant.
In Tape and Reel. R1 Suffix = 500 Units, 24 mm Tape Width, 13-inch Reel.
More
Less
Features
Typical Two-Tone Performance @ 960 MHz, V
DD
= 28 Vdc, I
DQ
= 125 mA, Pout = 10 W PEP
Power Gain: 18 dB
Drain Efficiency: 32%
IMD: –37 dBc
Capable of Handling 10:1 VSWR @ 28 Vdc, 960 MHz, 10 W CW Output Power
Characterized with Series Equivalent Large-Signal Impedance Parameters
On-Chip RF Feedback for Broadband Stability
Qualified Up to a Maximum of 32 V
DD
Operation
Integrated ESD Protection
225°C Capable Plastic Package
RoHS Compliant.
In Tape and Reel. R1 Suffix = 500 Units, 24 mm Tape Width, 13-inch Reel.
Data Sheets
Application Notes
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Key Parametrics
Frequency (Min) (MHz)
1
Frequency (Max) (MHz)
2000
Supply Voltage (Typ) (V)
28
P1dB (Typ) (dBm)
40
P1dB (Typ) (W)
10
Output Power (Typ) (W) @ Intermodulation Level at Test Signal
10.0 @ PEP
Test Signal
2-TONE
Power Gain (Typ) (dB) @ f (MHz)
18.0 @ 960
Efficiency (Typ) (%)
32
Thermal Resistance (Spec) (℃/W)
2.85
Matching
unmatched
Class
A, AB
Die Technology
LDMOS
.