MMRF1022HS: 2110-2170 MHz, 63 W Avg., 28 V RF Power LDMOS Transistor

Overview

The MMRF1022HS 63 W asymmetrical Doherty RF power LDMOS transistor is optimized for instantaneous signal bandwidth capabilities covering the frequency range of 2110 to 2170 MHz. This part is ideally suited for commercial and defense communications and electronic warfare applications, such as an IED jammer.

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Features

Advanced high performance in-package Doherty
Greater negative gate-source voltage range for improved Class C operation
Designed for digital predistortion error correction systems
RoHS compliant

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Features

Advanced high performance in-package Doherty
Greater negative gate-source voltage range for improved Class C operation
Designed for digital predistortion error correction systems
RoHS compliant

Data Sheets

Application Notes

NI-1230S-4L2L Package Image

NI-1230S-4L2L Package Image

NI-1230S-4L2L Package Image

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Key Parametrics

Frequency (Min) (MHz)

2110
Frequency (Max) (MHz)

2170
Supply Voltage (Typ) (V)

28
P1dB (Typ) (dBm)

54.8
P1dB (Typ) (W)

301
Output Power (Typ) (W) @ Intermodulation Level at Test Signal

63.0 @ AVG
Test Signal

WCDMA
Power Gain (Typ) (dB) @ f (MHz)

16.2 @ 2140
Efficiency (Typ) (%)

51.8
Thermal Resistance (Spec) (℃/W)

0.33
Matching

input and output impedance matching
Class

AB, C
Die Technology

LDMOS

RF Performance Table

2100 MHz

Typical Doherty Single-Carrier W-CDMA Performance: V_DD = 28 Vdc, I_DQA = 500 mA, V_GSB = 0.5 Vdc, Pout = 63 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.

Frequency	G_ps (dB)	η_D (%)	Output PAR (dB)	ACPR (dBc)
2110 MHz	16.2	51.6	7.9	–28.5
2140 MHz	16.2	51.8	7.9	–28.8
2170 MHz	16.1	50.9	7.9	–29.5