MMRF1022HS: 2110-2170 MHz, 63 W Avg., 28 V RF Power LDMOS Transistor
Key Parametrics
-
- Frequency (Min) (MHz)
- 2110
-
- Frequency (Max) (MHz)
- 2170
-
- Supply Voltage (Typ) (V)
- 28
-
- P1dB (Typ) (dBm)
- 54.8
-
- P1dB (Typ) (W)
- 301
-
- Output Power (Typ) (W) @ Intermodulation Level at Test Signal
- 63.0 @ AVG
-
- Test Signal
- WCDMA
-
- Power Gain (Typ) (dB) @ f (MHz)
- 16.2 @ 2140
-
- Efficiency (Typ) (%)
- 51.8
-
- Thermal Resistance (Spec) (℃/W)
- 0.33
-
- Matching
- input and output impedance matching
-
- Class
- AB, C
-
- Die Technology
- LDMOS
.
RF Performance Table
2100 MHz
Typical Doherty Single-Carrier W-CDMA Performance: VDD = 28 Vdc, IDQA = 500 mA, VGSB = 0.5 Vdc, Pout = 63 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.| Frequency | Gps (dB) |
ηD (%) |
Output PAR (dB) |
ACPR (dBc) |
| 2110 MHz | 16.2 | 51.6 | 7.9 | –28.5 |
| 2140 MHz | 16.2 | 51.8 | 7.9 | –28.8 |
| 2170 MHz | 16.1 | 50.9 | 7.9 | –29.5 |