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MMRF1023HS: 2300-2400 MHz, 66 W Avg., 28 V RF Power LDMOS Transistor

Overview

The MMRF1023HS 66 W asymmetrical Doherty RF power LDMOS transistor is optimized for instantaneous signal bandwidth capabilities covering the frequency range of 2300 to 2400 MHz. This part is ideally suited for commercial and defense communications and electronic warfare applications, such as an IED jammer.

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Features

Advanced high performance in-package Doherty
Greater negative gate-source voltage range for improved Class C operation
Designed for digital predistortion error correction systems
RoHS compliant

MoreLess

Features

Advanced high performance in-package Doherty
Greater negative gate-source voltage range for improved Class C operation
Designed for digital predistortion error correction systems
RoHS compliant

Data Sheets

Application Notes

NI-1230S-4L2L Package Image

NI-1230S-4L2L Package Image

NI-1230S-4L2L Package Image

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Key Parametrics

Frequency (Min) (MHz)

2300
Frequency (Max) (MHz)

2400
Supply Voltage (Typ) (V)

28
P1dB (Typ) (dBm)

54.4
P1dB (Typ) (W)

275
Output Power (Typ) (W) @ Intermodulation Level at Test Signal

66.0 @ AVG
Test Signal

WCDMA
Power Gain (Typ) (dB) @ f (MHz)

14.9 @ 2300
Efficiency (Typ) (%)

46.7
Thermal Resistance (Spec) (℃/W)

0.25
Matching

input and output impedance matching
Class

AB, C
Die Technology

LDMOS

RF Performance Table

2300 MHz

Typical Doherty Single-Carrier W-CDMA Performance: V_DD = 28 Vdc, I_DQA = 750 mA, V_GSB = 0.7 Vdc, Pout = 66 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.

Frequency	G_ps (dB)	η_D (%)	Output PAR (dB)	ACPR (dBc)
2300 MHz	14.9	46.7	7.8	–34.0
2350 MHz	15.1	46.5	7.8	–35.6
2400 MHz	15.1	46.4	7.5	–34.6