MMRF1050H: 1050 W Peak over 850-950 MHz, 50 V Airfast® RF Power LDMOS Transistor

Overview

Features

NI-1230H-4S

NI-1230H-4S

Key Parametrics

  • Frequency (Min) (MHz)
    850
  • Frequency (Max) (MHz)
    950
  • Supply Voltage (Typ) (V)
    50
  • P1dB (Typ) (dBm)
    60.2
  • P1dB (Typ) (W)
    1050
  • Output Power (Typ) (W) @ Intermodulation Level at Test Signal
    1050.0 @ Peak
  • Test Signal
    Pulse
  • Power Gain (Typ) (dB) @ f (MHz)
    21.3 @ 950
  • Efficiency (Typ) (%)
    63.7
  • Thermal Resistance (Spec) (℃/W)
    0.034
  • Matching
    unmatched
  • Class
    AB
  • Die Technology
    LDMOS
.

RF Performance Tables

Typical Performance

VDD = 50 Vdc, IDQ(A+B) = 100 mA
Frequency
(MHz)
Signal Type Pout
(W)
Gps
(dB)
ηD
(%)
950 Pulse
(100 μsec, 20% Duty Cycle)
1050 Peak 21.3 63.7

Load Mismatch/Ruggedness

Frequency
(MHz)
Signal Type VSWR Pin
(W)
Gps
(dB)
ηD
(%)
950 Pulse
(100 μsec, 20% Duty Cycle)
> 20:1 at all Phase Angles 15 W Peak (3 dB Overdrive) 50 No Device Degradation