1050 W Peak over 850-950 MHz, 50 V Airfast® RF Power LDMOS Transistor

MMRF1050H

This MMRF1050H RF power transistor is designed for short pulse applications operating at frequencies from 850 to 950 MHz.

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Features

  • Internally input and output matched for broadband operation and ease of use
  • Device can be used in a single-ended, push-pull or quadrature configuration
  • Qualified up to 50 V
  • High ruggedness, handles > 20:1 VSWR
  • Integrated ESD protection with greater negative voltage range for improved Class C operation and gate voltage pulsing
  • Characterized with series equivalent large-signal impedance parameters
  • RoHS compliant
  • Land- or sea-based UHF radar

Part numbers include: MMRF1050H.

Key Parametrics

  • Frequency (Min) (MHz)
    850
  • Frequency (Max) (MHz)
    950
  • Supply Voltage (Typ) (V)
    50
  • P1dB (Typ) (dBm)
    60.2
  • P1dB (Typ) (W)
    1050
  • Die Technology
    LDMOS

RF Performance Tables

Typical Performance

VDD = 50 Vdc, IDQ(A+B) = 100 mA
Frequency
(MHz)		 Signal Type Pout
(W)		 Gps
(dB)		 ηD
(%)
950 Pulse
(100 μsec, 20% Duty Cycle)		 1050 Peak 21.3 63.7

Load Mismatch/Ruggedness

Frequency
(MHz)		 Signal Type VSWR Pin
(W)		 Gps
(dB)		 ηD
(%)
950 Pulse
(100 μsec, 20% Duty Cycle)		 > 20:1 at all Phase Angles 15 W Peak (3 dB Overdrive) 50 No Device Degradation

Documentation

Quick reference to our documentation types.

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2 documents

Design Resources

Design Files

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3 design files

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