MMRF1017N: 720-960 MHz, 80 W Avg., 28 V Airfast® RF Power LDMOS Transistor
Key Parametrics
-
- Frequency (Min) (MHz)
- 720
-
- Frequency (Max) (MHz)
- 960
-
- Supply Voltage (Typ) (V)
- 28
-
- P1dB (Typ) (dBm)
- 54.5
-
- P1dB (Typ) (W)
- 280
-
- Output Power (Typ) (W) @ Intermodulation Level at Test Signal
- 80.0 @ AVG
-
- Test Signal
- WCDMA
-
- Power Gain (Typ) (dB) @ f (MHz)
- 20.0 @ 960
-
- Efficiency (Typ) (%)
- 36.1
-
- Thermal Resistance (Spec) (℃/W)
- 0.31
-
- Matching
- input and output impedance matching
-
- Class
- AB
-
- Die Technology
- LDMOS
.
RF Performance Table
900 MHz
Typical Single-Carrier W-CDMA Performance: VDD = 28 Vdc, IDQ = 1400 mA, Pout = 80 W Avg., Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.| Frequency | Gps (dB) |
ηD (%) |
Output PAR (dB) |
ACPR (dBc) |
IRL (dB) |
| 920 MHz | 20.0 | 35.9 | 6.3 | –38.0 | –14 |
| 940 MHz | 20.1 | 36.2 | 6.2 | –37.6 | –18 |
| 960 MHz | 20.0 | 36.1 | 6.1 | –37.5 | –17 |