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AFV141KH
MMRF1005H
MMRF1011H
MMRF1014N
MMRF1304L
MMRF1304N
MMRF1305H
MMRF1314H
MRF6V10010N
MRF6V13250H
MRF6V14300H
MRFE6VP100H
MRFE6VS25L
MRFE6VS25N
MRF6V14300H
MRF6V14300H: 1400 MHz, 330 W, 50 V Pulsed Lateral N-Channel RF Power MOSFETs
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Overview
Documentation
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Buy/Parametrics
Package/Quality
Overview
The MRF6V14300HR3 and MRF6V14300HSR3 are RF Power transistors designed for applications operating at frequencies between 1200 and 1400 MHz, 1% to 12% duty cycle. These device are suitable for use in pulsed applications.
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Features
Typical Pulsed Performance: V
DD
= 50 Volts, I
DQ
= 150 mA, Pout = 330 Watts Peak (39.6 W Avg.), f = 1400 MHz, Pulse Width = 300 µsec, Duty Cycle = 12%
Power Gain: 18 dB
Drain Efficiency: 60.5%
Capable of Handling 5:1 VSWR, @ 50 Vdc, 1400 MHz, 300 Watts Peak Power
Characterized with Series Equivalent Large–Signal Impedance Parameters
Internally Matched for Ease of Use
Qualified Up to a Maximum of 50 V
DD
Operation
Integrated ESD Protection
Greater Negative Gate-Source Voltage Range for Improved Class C Operation
RoHS Compliant
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
More
Less
Features
Typical Pulsed Performance: V
DD
= 50 Volts, I
DQ
= 150 mA, Pout = 330 Watts Peak (39.6 W Avg.), f = 1400 MHz, Pulse Width = 300 µsec, Duty Cycle = 12%
Power Gain: 18 dB
Drain Efficiency: 60.5%
Capable of Handling 5:1 VSWR, @ 50 Vdc, 1400 MHz, 300 Watts Peak Power
Characterized with Series Equivalent Large–Signal Impedance Parameters
Internally Matched for Ease of Use
Qualified Up to a Maximum of 50 V
DD
Operation
Integrated ESD Protection
Greater Negative Gate-Source Voltage Range for Improved Class C Operation
RoHS Compliant
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Data Sheets
Application Notes
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Key Parametrics
Frequency (Min) (MHz)
1200
Frequency (Max) (MHz)
1400
Supply Voltage (Typ) (V)
50
P1dB (Typ) (dBm)
55.2
P1dB (Typ) (W)
330
Output Power (Typ) (W) @ Intermodulation Level at Test Signal
330.0 @ Peak
Test Signal
Pulse
Power Gain (Typ) (dB) @ f (MHz)
18.0 @ 1400
Efficiency (Typ) (%)
60.5
Thermal Resistance (Spec) (℃/W)
0.13
Matching
input and output impedance matching
Class
AB
Die Technology
LDMOS
.