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MRF6S18060N
MRF6S18060N: 1800-2000 MHz, 60 W, 26 V GSM/GSM EDGE Lateral N-Channel RF Power MOSFETs
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Overview
Documentation
Tools & Software
Buy/Parametrics
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Overview
The MRF6S18060NR1 and MRF6S18060NBR1 are designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for TDMA, CDMA, and multicarrier amplifier applications.
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Features
GSM Application
Typical GSM Performance: V
DD
= 26 Vdc, I
DQ
= 600 mA, Pout = 60 Watts CW, f = 1990 MHz
Power Gain: 15 dB
Drain Efficiency: 50%
GSM EDGE Application
Typical GSM EDGE Performance: V
DD
= 26 Volts, I
DQ
= 450 mA, Pout = 25 Watts Avg., Full Frequency Band (1805–1880 MHz or 1930–1990 MHz)
Power Gain: 15.5 dB
Spectral Regrowth @ 400 kHz Offset = –62 dBc
Spectral Regrowth @ 600 kHz Offset = –76 dBc
EVM: 2% rms
Capable of Handling 5:1 VSWR, @ 26 Vdc, 1990 MHz, 60 Watts CW Output Power
Characterized with Series Equivalent Large–Signal Impedance Parameters
Internally Matched for Ease of Use
Qualified Up to a Maximum of 32 V
DD
Operation
Integrated ESD Protection
225°C Capable Plastic Package
N Suffix Indicates Lead-Free Terminations. RoHS Compliant.
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
More
Less
Features
GSM Application
Typical GSM Performance: V
DD
= 26 Vdc, I
DQ
= 600 mA, Pout = 60 Watts CW, f = 1990 MHz
Power Gain: 15 dB
Drain Efficiency: 50%
GSM EDGE Application
Typical GSM EDGE Performance: V
DD
= 26 Volts, I
DQ
= 450 mA, Pout = 25 Watts Avg., Full Frequency Band (1805–1880 MHz or 1930–1990 MHz)
Power Gain: 15.5 dB
Spectral Regrowth @ 400 kHz Offset = –62 dBc
Spectral Regrowth @ 600 kHz Offset = –76 dBc
EVM: 2% rms
Capable of Handling 5:1 VSWR, @ 26 Vdc, 1990 MHz, 60 Watts CW Output Power
Characterized with Series Equivalent Large–Signal Impedance Parameters
Internally Matched for Ease of Use
Qualified Up to a Maximum of 32 V
DD
Operation
Integrated ESD Protection
225°C Capable Plastic Package
N Suffix Indicates Lead-Free Terminations. RoHS Compliant.
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
Data Sheets
Application Notes
TO-270WB-4, TO-272WB-4 Package Images
TO-270WB-4, TO-272WB-4 Package Images
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TO-270WB-4, TO-272WB-4 Package Images
TO-270WB-4, TO-272WB-4 Package Images
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Key Parametrics
Frequency (Min) (MHz)
1800
Frequency (Max) (MHz)
2000
Supply Voltage (Typ) (V)
26
P1dB (Typ) (dBm)
47.8
P1dB (Typ) (W)
60
Output Power (Typ) (W) @ Intermodulation Level at Test Signal
60.0 @ CW
Test Signal
1-TONE
Power Gain (Typ) (dB) @ f (MHz)
15.0 @ 1990
Efficiency (Typ) (%)
50
Thermal Resistance (Spec) (℃/W)
0.81
Matching
input and output impedance matching
Class
AB
Die Technology
LDMOS
.