MRF6S18060N: 1800-2000 MHz, 60 W, 26 V GSM/GSM EDGE Lateral N-Channel RF Power MOSFETs

Overview

The MRF6S18060NR1 and MRF6S18060NBR1 are designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for TDMA, CDMA, and multicarrier amplifier applications.

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Features

GSM Application

Typical GSM Performance: V_DD = 26 Vdc, I_DQ = 600 mA, Pout = 60 Watts CW, f = 1990 MHz
Power Gain: 15 dB

Drain Efficiency: 50%

GSM EDGE Application

Typical GSM EDGE Performance: V_DD = 26 Volts, I_DQ = 450 mA, Pout = 25 Watts Avg., Full Frequency Band (1805–1880 MHz or 1930–1990 MHz)
Power Gain: 15.5 dB

Spectral Regrowth @ 400 kHz Offset = –62 dBc

Spectral Regrowth @ 600 kHz Offset = –76 dBc

EVM: 2% rms
Capable of Handling 5:1 VSWR, @ 26 Vdc, 1990 MHz, 60 Watts CW Output Power
Characterized with Series Equivalent Large–Signal Impedance Parameters
Internally Matched for Ease of Use
Qualified Up to a Maximum of 32 V_DD Operation
Integrated ESD Protection
225°C Capable Plastic Package
N Suffix Indicates Lead-Free Terminations. RoHS Compliant.
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.

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Features

GSM Application

Typical GSM Performance: V_DD = 26 Vdc, I_DQ = 600 mA, Pout = 60 Watts CW, f = 1990 MHz
Power Gain: 15 dB

Drain Efficiency: 50%

GSM EDGE Application

Typical GSM EDGE Performance: V_DD = 26 Volts, I_DQ = 450 mA, Pout = 25 Watts Avg., Full Frequency Band (1805–1880 MHz or 1930–1990 MHz)
Power Gain: 15.5 dB

Spectral Regrowth @ 400 kHz Offset = –62 dBc

Spectral Regrowth @ 600 kHz Offset = –76 dBc

EVM: 2% rms
Capable of Handling 5:1 VSWR, @ 26 Vdc, 1990 MHz, 60 Watts CW Output Power
Characterized with Series Equivalent Large–Signal Impedance Parameters
Internally Matched for Ease of Use
Qualified Up to a Maximum of 32 V_DD Operation
Integrated ESD Protection
225°C Capable Plastic Package
N Suffix Indicates Lead-Free Terminations. RoHS Compliant.
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.

Data Sheets

Application Notes

TO-270WB-4, TO-272WB-4 Package Images

TO-270WB-4, TO-272WB-4 Package Images

TO-270WB-4, TO-272WB-4 Package Images

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Key Parametrics

Frequency (Min) (MHz)

1800
Frequency (Max) (MHz)

2000
Supply Voltage (Typ) (V)

26
P1dB (Typ) (dBm)

47.8
P1dB (Typ) (W)

60
Output Power (Typ) (W) @ Intermodulation Level at Test Signal

60.0 @ CW
Test Signal

1-TONE
Power Gain (Typ) (dB) @ f (MHz)

15.0 @ 1990
Efficiency (Typ) (%)

50
Thermal Resistance (Spec) (℃/W)

0.81
Matching

input and output impedance matching
Class

AB
Die Technology

LDMOS