A2G22S190-01S: 1800-2200 MHz, 36 W Avg., 48 V Airfast® RF Power GaN Transistor
Key Parametrics
-
- Frequency (Min) (MHz)
- 1800
-
- Frequency (Max) (MHz)
- 2200
-
- Supply Voltage (Typ) (V)
- 48
-
- P3dB (Typ) (dBm)
- 52.6
-
- P3dB (Typ) (W)
- 182
-
- Output Power (Typ) (W) @ Intermodulation Level at Test Signal
- 36.0 @ AVG
-
- Test Signal
- WCDMA
-
- Power Gain (Typ) (dB) @ f (MHz)
- 16.5 @ 1805
-
- Efficiency (Typ) (%)
- 36.2
-
- Thermal Resistance (Spec) (℃/W)
- 1.6
-
- Matching
- input impedance matching
-
- Class
- AB
-
- Die Technology
- GaN
.
RF Performance Table
2000 MHz
Typical Single-Carrier W-CDMA Performance: VDD = 48 Vdc, IDQ = 200 mA, Pout = 36 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.| Frequency | Gps (dB) |
ηD (%) |
Output PAR (dB) |
ACPR (dBc) |
IRL (dB) |
| 1805 MHz | 16.5 | 36.2 | 7.1 | –33.8 | –6 |
| 1990 MHz | 17.3 | 37.2 | 6.9 | –33.2 | –11 |
| 2170 MHz | 16.8 | 38.5 | 6.7 | –32.6 | –7 |