A3I20X050N: 1800-2200 MHz, 6.3 W Avg., 28 V Airfast^® Wideband Integrated RF LDMOS Amplifier

Key Parametrics

• Frequency (Min) (MHz)

  1800

• Frequency (Max) (MHz)

  2200

• Supply Voltage (Typ) (V)

  28

• P3dB (Typ) (dBm)

  48

• P3dB (Typ) (W)

  63

• Output Power (Typ) (W) @ Intermodulation Level at Test Signal

  6.3 @ AVG

• Test Signal

  WCDMA

• Power Gain (Typ) (dB) @ f (MHz)

  28.7 @ 1840

• Efficiency (Typ) (%)

  39.1

• Thermal Resistance (Spec) (℃/W)

  1.9

• Matching

  input and output impedance matching

• Class

  AB, C

• Die Technology

  LDMOS

RF Performance Table

1800 MHz

Typical Doherty Single-Carrier W-CDMA Characterization Performance: V_DD = 28 Vdc, I_DQ(Carrier) = 160 mA, V_GS(Peaking) = 2.15 Vdc, P_out = 6.3 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ⁽¹⁾

Frequency	Gps (dB)	PAE (%)	ACPR (dBc)
1805 MHz	28.7	38.1	–37.1
1840 MHz	28.7	39.1	–39.7
1880 MHz	28.7	39.0	–37.5

1800–2200 MHz

Typical Doherty Single-Carrier W-CDMA Performance: V_DD = 28 Vdc, I_DQ(Carrier) = 145 mA, V_GS(Peaking) = 2.20 Vdc, P_out = 6.3 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ⁽¹⁾

Frequency	Gps (dB)	PAE (%)	ACPR (dBc)
1800 MHz	28.3	37.3	–33.5
1900 MHz	28.4	38.0	–37.7
2000 MHz	28.7	37.6	–40.9
2100 MHz	29	38.0	–39.1
2200 MHz	29.0	37.6	–34.1

1. All data measured in fixture with device soldered to heatsink.