MRF8P20100H: 1805-2025 MHz, 20 W Avg., 28 V Single W-CDMA Lateral N-Channel RF Power MOSFETs
Key Parametrics
-
- Frequency (Min) (MHz)
- 1805
-
- Frequency (Max) (MHz)
- 2025
-
- Supply Voltage (Typ) (V)
- 28
-
- P1dB (Typ) (dBm)
- 48.9
-
- P1dB (Typ) (W)
- 78
-
- P3dB (Typ) (dBm)
- 51
-
- P3dB (Typ) (W)
- 126
-
- Output Power (Typ) (W) @ Intermodulation Level at Test Signal
- 20.0 @ AVG
-
- Test Signal
- WCDMA
-
- Power Gain (Typ) (dB) @ f (MHz)
- 16.0 @ 2025
-
- Efficiency (Typ) (%)
- 44.3
-
- Thermal Resistance (Spec) (℃/W)
- 0.88
-
- Matching
- input and output impedance matching
-
- Class
- AB, C
-
- Die Technology
- LDMOS
.
RF Performance Tables
2025 MHz
Typical Doherty Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQA = 400 mA, VGSB = 1.3 Vdc, Pout = 20 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.| Frequency | Gps (dB) |
ηD (%) |
Output PAR (dB) |
ACPR (dBc) |
| 2025 MHz | 16.0 | 44.3 | 7.8 | –33.5 |
1880-1920 MHz
Typical Doherty Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQA = 400 mA, VGSB = 1.3 Vdc, Pout = 20 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.| Frequency | Gps (dB) |
ηD (%) |
Output PAR (dB) |
ACPR (dBc) |
| 1880 MHz | 16.2 | 43.5 | 7.6 | –30.8 |
| 1900 MHz | 16.1 | 43.4 | 7.6 | –32.6 |
| 1920 MHz | 15.8 | 42.9 | 7.6 | –34.6 |
1800 MHz
Typical GSM EDGE Performance: VDD = 28 Volts, IDQA = IDQB = 330 mA, Pout = 42 Watts Avg.| Frequency | Gps (dB) |
ηD (%) |
SR1 @ 400 kHz (dBc) |
SR2 @ 600 kHz (dBc) |
EVM (% rms) |
| 1805 MHz | 17.1 | 43.8 | –58.4 | –74.4 | 3.0 |
| 1840 MHz | 17.3 | 42.4 | –60.0 | –75.5 | 2.6 |
| 1880 MHz | 17.1 | 41.7 | –60.5 | –75.3 | 2.4 |