A2T20H160W04N: 1880-2025 MHz, 28 W Avg., 28 V Airfast® RF Power LDMOS Transistor
Key Parametrics
-
- Frequency (Min) (MHz)
- 1880
-
- Frequency (Max) (MHz)
- 2025
-
- Supply Voltage (Typ) (V)
- 28
-
- P1dB (Typ) (dBm)
- 49.5
-
- P1dB (Typ) (W)
- 90
-
- P3dB (Typ) (dBm)
- 53
-
- P3dB (Typ) (W)
- 200
-
- Output Power (Typ) (W) @ Intermodulation Level at Test Signal
- 28.0 @ AVG
-
- Test Signal
- WCDMA
-
- Power Gain (Typ) (dB) @ f (MHz)
- 17.0 @ 1960
-
- Efficiency (Typ) (%)
- 47.7
-
- Thermal Resistance (Spec) (℃/W)
- 0.45
-
- Matching
- input and output impedance matching
-
- Class
- AB, C
-
- Die Technology
- LDMOS
.
RF Performance Table
1880-2025 MHz
Typical Doherty single-carrier W-CDMA performance: VDD = 28 Vdc, IDQA = 400 mA, VGSB = 0.2 Vdc, Pout = 28 W Avg., input signal PAR = 9.9 dB @ 0.01% probability on CCDF.| Frequency | Gps (dB) |
ηD (%) |
Output PAR (dB) |
ACPR (dBc) |
| 1880 MHz | 16.8 | 45.8 | 8.3 | –32.5 |
| 1960 MHz | 17.0 | 47.7 | 8.2 | –33.5 |
| 2025 MHz | 16.5 | 47.9 | 8.0 | –34.3 |