AFT27S010N: 100-3600 MHz, 1.26 W Avg., 28 V Airfast^® RF Power LDMOS Transistor

Overview

The AFT27S010NT1 1.26 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 100 to 3600 MHz.

Features

Greater Negative Gate-Source Voltage Range for Improved Class C Operation
Designed for Digital Predistortion Error Correction Systems
Universal Broadband Driven Device with Internal RF Feedback
RoHS Compliant
In Tape and Reel. T1 Suffix = 1000 Units, 16 mm Tape Width, 7-inch Reel.

Features

Greater Negative Gate-Source Voltage Range for Improved Class C Operation
Designed for Digital Predistortion Error Correction Systems
Universal Broadband Driven Device with Internal RF Feedback
RoHS Compliant
In Tape and Reel. T1 Suffix = 1000 Units, 16 mm Tape Width, 7-inch Reel.

Application Notes

PLD-1.5W Package Image

PLD-1.5W Package Image

PLD-1.5W Package Image

PLD-1.5W Package Image

PLD-1.5W Package Image

Key Parametrics

Frequency (Min) (MHz)

100
Frequency (Max) (MHz)

3600
Supply Voltage (Typ) (V)

28
P1dB (Typ) (dBm)

40
P1dB (Typ) (W)

10
Output Power (Typ) (W) @ Intermodulation Level at Test Signal

1.26 @ AVG
Test Signal

WCDMA
Power Gain (Typ) (dB) @ f (MHz)

21.7 @ 2170
Efficiency (Typ) (%)

22.6
Thermal Resistance (Spec) (℃/W)

3.5
Matching

unmatched
Class

AB
Die Technology

LDMOS

.

RF Performance Tables

700 MHz

Typical Single-Carrier W-CDMA Performance: V_DD = 28 Vdc, I_DQ = 80 mA, Pout = 1.26 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.⁽¹⁾

Frequency	G_ps (dB)	η_D (%)	Output PAR (dB)	ACPR (dBc)	IRL (dB)
728 MHz	24.3	25.5	9.3	–44.0	–12
748 MHz	24.3	24.7	9.4	–43.9	–12
768 MHz	24.3	23.8	9.5	–43.6	–12

2100 MHz

Typical Single-Carrier W-CDMA Performance: V_DD = 28 Vdc, I_DQ = 90 mA, Pout = 1.26 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.⁽¹⁾

Frequency	G_ps (dB)	η_D (%)	Output PAR (dB)	ACPR (dBc)	IRL (dB)
2110 MHz	21.6	23.2	9.1	–42.0	–11
2140 MHz	21.8	23.	9.0	–41.5	–15
2170 MHz	21.7	22.6	8.7	–41.7	–15

2300 MHz

Typical Single-Carrier W-CDMA Performance: V_DD = 28 Vdc, I_DQ = 90 mA, Pout = 1.26 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.⁽¹⁾

Frequency	G_ps (dB)	η_D (%)	Output PAR (dB)	ACPR (dBc)	IRL (dB)
2300 MHz	21.2	23.6	9.0	–40.9	–10
2350 MHz	21.6	22.6	8.6	–40.0	–22
2400 MHz	20.7	21.0	8.3	–40.1	–9

2600 MHz

Typical Single-Carrier W-CDMA Performance: V_DD = 28 Vdc, I_DQ = 90 mA, Pout = 1.26 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.⁽¹⁾

Frequency	G_ps (dB)	η_D (%)	Output PAR (dB)	ACPR (dBc)	IRL (dB)
2500 MHz	19.6	22.0	9.8	–44.8	–7
2600 MHz	21.0	22.7	9.4	–41.4	–15
2700 MHz	19.6	21.2	8.9	–39.7	–5

3500 MHz

Typical Single-Carrier W-CDMA Performance: V_DD = 28 Vdc, I_DQ = 80 mA, Pout = 1.26 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.⁽¹⁾

Frequency	G_ps (dB)	η_D (%)	Output PAR (dB)	ACPR (dBc)	IRL (dB)
3400 MHz	14.7	15.8	9.0	–44.9	–7
3500 MHz	16.0	16.8	9.0	–44.9	–8
3600 MHz	16.0	17.4	8.6	–44.2	–4

1. All data measured in fixture with device soldered to heatsink.