A2G22S160-01S: 1800-2200 MHz, 32 W Avg., 48 V Airfast® RF Power GaN Transistor
Key Parametrics
-
- Frequency (Min) (MHz)
- 1800
-
- Frequency (Max) (MHz)
- 2200
-
- Supply Voltage (Typ) (V)
- 48
-
- P1dB (Typ) (dBm)
- 51
-
- P1dB (Typ) (W)
- 125
-
- P3dB (Typ) (dBm)
- 52
-
- P3dB (Typ) (W)
- 160
-
- Output Power (Typ) (W) @ Intermodulation Level at Test Signal
- 32.0 @ AVG
-
- Test Signal
- WCDMA
-
- Power Gain (Typ) (dB) @ f (MHz)
- 19.6 @ 2110
-
- Efficiency (Typ) (%)
- 38
-
- Thermal Resistance (Spec) (℃/W)
- 1.7
-
- Matching
- input impedance matching
-
- Class
- AB
-
- Die Technology
- GaN
.
RF Performance Tables
2100 MHz
Typical Single-Carrier W-CDMA Performance: VDD = 48 Vdc, IDQ = 150 mA, Pout = 32 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.| Frequency | Gps (dB) |
ηD (%) |
Output PAR (dB) |
ACPR (dBc) |
IRL (dB) |
| 2110 MHz | 19.6 | 38.0 | 7.2 | –30.3 | –20 |
| 2140 MHz | 19.9 | 38.3 | 7.1 | –30.0 | –23 |
| 2170 MHz | 20.0 | 39.0 | 7.1 | –29.7 | –19 |
1800 MHz
Typical Single-Carrier W-CDMA Performance: VDD = 48 Vdc, IDQ = 150 mA, Pout = 32 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.| Frequency | Gps (dB) |
ηD (%) |
Output PAR (dB) |
ACPR (dBc) |
IRL (dB) |
| 1805 MHz | 18.2 | 36.9 | 7.1 | –33.4 | –11 |
| 1840 MHz | 18.5 | 37.4 | 7.1 | –33.0 | –16 |
| 1880 MHz | 18.6 | 38.2 | 7.0 | –32.5 | –16 |