A3G23H500W17S: 2300-2400 MHz, 80 W Avg., 48 V Airfast® RF Power GaN Transistor

Overview

Features

NI-780S-4S2S Package Image

NI-780S-4S2S Package Image

Key Parametrics

  • Frequency (Min) (MHz)
    2300
  • Frequency (Max) (MHz)
    2400
  • Supply Voltage (Typ) (V)
    48
  • P3dB (Typ) (dBm)
    57.8
  • P3dB (Typ) (W)
    603
  • Output Power (Typ) (W) @ Intermodulation Level at Test Signal
    80.0 @ Avg
  • Test Signal
    WCDMA
  • Power Gain (Typ) (dB) @ f (MHz)
    14.3 @ 2300
  • Efficiency (Typ) (%)
    52.7
  • Thermal Resistance (Spec) (℃/W)
    0.53
  • Matching
    input and output impedance matching
  • Class
    AB, C
  • Die Technology
    GaN
.

RF Performance Table

2300 MHz

Typical Doherty Single-Carrier W-CDMA Performance: VDD = 48 Vdc, IDQA = 300 mA, VGSB = -5.0 Vdc, Pout = 80 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
 
Frequency Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
2300 MHz 14.5 53.7 8.4 -30.5
2350 MHz 14.6 52.8 8.3 -30.6
2400 MHz 14.2 53.2 8.1 -31.9