A3V26S004N: 2496-2690 MHz, 26 dBm Avg., 48 V Airfast® RF Power LDMOS Transistor

Overview

Features

DFN 4.5 x 4 Package Image

DFN 4.5 x 4 Package Image

Key Parametrics

  • Frequency (Min) (MHz)
    2496
  • Frequency (Max) (MHz)
    2690
  • Supply Voltage (Typ) (V)
    48
  • P3dB (Typ) (dBm)
    34.9
  • P3dB (Typ) (W)
    3.1
  • Output Power (Typ) (W) @ Intermodulation Level at Test Signal
    0.22 @ Avg
  • Test Signal
    WCDMA
  • Power Gain (Typ) (dB) @ f (MHz)
    23.0 @ 2595
  • Efficiency (Typ) (%)
    15.5
  • Thermal Resistance (Spec) (℃/W)
    8
  • Matching
    input and output impedance matching
  • Class
    AB
  • Die Technology
    LDMOS
.

RF Performance Table

2600 MHz

Typical Single-Carrier W-CDMA Reference Circuit Performance: VDD = 42 Vdc, IDQ = 17 mA, Pout = 23.5 dBm Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.(1)
Frequency Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
2515 MHz23.215.110.3-35.0
2595 MHz23.015.59.6-37.0
2675 MHz22.014.89.3-37.7
1. All data measured in reference circuit with device soldered to printed circuit board.