This A3G26H350W17S 59 W asymmetrical Doherty RF power GaN transistor is designed for
cellular base station applications requiring very wide instantaneous bandwidth
capability covering the frequency range of 2496 to 2690 MHz.
This part is characterized and performance is guaranteed for applications
operating in the 2496 to 2690 MHz band. There is no guarantee of performance
when this part is used in applications designed outside these frequencies.