A3G26H502W17S: 2496-2690 MHz, 80 W Avg., 48 V Airfast® RF Power GaN Transistor

Overview

Features

NI-780S-4S2S Package Image

NI-780S-4S2S Package Image

Key Parametrics

  • Frequency (Min) (MHz)
    2496
  • Frequency (Max) (MHz)
    2690
  • Supply Voltage (Typ) (V)
    48
  • P3dB (Typ) (dBm)
    57
  • P3dB (Typ) (W)
    500
  • Output Power (Typ) (W) @ Intermodulation Level at Test Signal
    80.0 @ Avg
  • Test Signal
    WCDMA
  • Power Gain (Typ) (dB) @ f (MHz)
    13.2 @ 2690
  • Efficiency (Typ) (%)
    45
  • Thermal Resistance (Spec) (℃/W)
    0.71
  • Matching
    input and output impedance matching
  • Class
    AB, C
  • Die Technology
    GaN
.

RF Performance Table

2600 MHz

Typical Doherty Single-Carrier W-CDMA Characterization Performance: VDD = 48 Vdc, IDQA = 370 mA, VGSB = -4.6 Vdc, Pout = 80 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. (1)
Frequency Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
2496 MHz14.448.47.8-32.6
2590 MHz15.049.38.2-35.2
2690 MHz14.851.27.8-34.0
1. All data measured in fixture with device soldered to heatsink.