A3G26D055N: 700-850 MHz, 2400-2690 MHz, 8 W Avg., 48 V Airfast^® RF Power GaN Transistor

Overview

This A3G26D055N 8 W symmetrical Doherty RF power GaN transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency ranges of 700–850 MHz and 2400–2690 MHz.

This part is characterized and performance is guaranteed for applications operating in the 700–850 MHz and 2400–2690 MHz bands. There is no guarantee of performance when this part is used in applications designed outside of these frequencies.

MoreLess

Features

High terminal impedances for optimal broadband performance
Improved linearized error vector magnitude with next generation signal
Able to withstand extremely high output VSWR and broadband operating conditions
Designed for low complexity analog or digital linearization systems
Optimized for massive MIMO active antenna systems for 5G base stations
RoHs compliant

MoreLess

Features

High terminal impedances for optimal broadband performance
Improved linearized error vector magnitude with next generation signal
Able to withstand extremely high output VSWR and broadband operating conditions
Designed for low complexity analog or digital linearization systems
Optimized for massive MIMO active antenna systems for 5G base stations
RoHs compliant

Data Sheets

Application Notes

Buy

DFN 7 x 6.5 Package Image

DFN 7 x 6.5 Package Image

DFN 7 x 6.5 Package Image

Previous Next

Key Parametrics

Frequency (Min) (MHz)

700
Frequency (Max) (MHz)

2690
Supply Voltage (Typ) (V)

48
P3dB (Typ) (dBm)

47.4
P3dB (Typ) (W)

55
Output Power (Typ) (W) @ Intermodulation Level at Test Signal

8.0 @ Avg
Test Signal

WCDMA
Power Gain (Typ) (dB) @ f (MHz)

18.0 @ 2675
Efficiency (Typ) (%)

54.1
Thermal Resistance (Spec) (℃/W)

3.7
Matching

input impedance matching
Class

AB, C
Die Technology

GaN

RF Performance Table

2600 MHz

Typical Doherty Single-Carrier W-CDMA Reference Circuit Performance: V_DD = 48 Vdc, I_DQA = 40 mA, V_GSB = –4.9 Vdc, P_out = 8 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ⁽¹⁾

Frequency	G_ps (dB)	η_D (%)	Output PAR (dB)	ACPR (dBc)
2515 MHz	18.0	52.1	8.3	-27.4
2595 MHz	18.2	53.5	8.2	-28.2
2675 MHz	18.0	54.1	8.1	-30.1

1. All data measured in reference circuit with device soldered to printed circuit board.

700 MHz

Typical Class AB Side A (top side) W-CDMA Reference Circuit Performance: V_DD = 48 Vdc, I_DQA = 40 mA, P_out = 5.6 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ⁽¹⁾

Frequency	G_ps (dB)	η_D (%)	Output PAR (dB)	P3dB (dBm)	ACPR (dBc)
750 MHz	20.0	41.7	7.0	44.5	-34.4
780 MHz	19.7	41.1	7.0	44.5	-34.3
810 MHz	19.2	40.6	7.0	44.5	-36.6

1. All data measured in reference circuit with device soldered to printed circuit board.

A3G26D055N: 700-850 MHz, 2400-2690 MHz, 8 W Avg., 48 V Airfast® RF Power GaN Transistor

Overview

Features

DFN 7 x 6.5 Package Image

DFN 7 x 6.5 Package Image

Key Parametrics

RF Performance Table

2600 MHz

700 MHz

A3G26D055N: 700-850 MHz, 2400-2690 MHz, 8 W Avg., 48 V Airfast^® RF Power GaN Transistor