A3G35H100-04S: 3400-3600 MHz, 14 W Avg., 48 V Airfast® RF Power GaN Transistor

Overview

Features

NI-780S-4L Package Image

NI-780S-4L Package Image
  • NI-780S-4L Package Image
    NI-780S-4L Package Image

NI-780S-4L Package Image

NI-780S-4L Package Image

Key Parametrics

  • Frequency (Min) (MHz)
    3400
  • Frequency (Max) (MHz)
    3600
  • Supply Voltage (Typ) (V)
    48
  • P3dB (Typ) (dBm)
    50
  • P3dB (Typ) (W)
    100
  • Output Power (Typ) (W) @ Intermodulation Level at Test Signal
    14.0 @ AVG
  • Test Signal
    WCDMA
  • Power Gain (Typ) (dB) @ f (MHz)
    14.0 @ 3600
  • Efficiency (Typ) (%)
    42.5
  • Thermal Resistance (Spec) (℃/W)
    2.3
  • Matching
    input impedance matching
  • Class
    AB, C
  • Die Technology
    GaN
.

RF Performance Table

3500 MHz

Typical Doherty Single-Carrier W-CDMA Performance: VDD = 48 Vdc, IDQA = 80 mA, VGSB = –5.0 Vdc, Pout = 14 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
Frequency Gps
(dB)		 ηD
(%)		 Output PAR
(dB)		 ACPR
(dBc)
3400 MHz14.043.89.6–34.0
3500 MHz14.041.49.7–34.5
3600 MHz14.042.59.6–32.2