3400-3600 MHz, 32 W Avg., 48 V Airfast® RF Power GaN Transistor

A2G35S160-01S
  • Archived
  • This page contains information on a product that is no longer manufactured (discontinued). Specifications and information herein are available for historical reference only.

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Product Details

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Features

  • High Terminal Impedances for Optimal Broadband Performance
  • Designed for Digital Predistortion Error Correction Systems
  • Optimized for Doherty Applications
  • RoHS Compliant

Part numbers include: A2G35S160-01S.

RF Performance Table

3500 MHz

Typical Single-Carrier W-CDMA Performance: VDD = 48 Vdc, IDQ = 190 mA, Pout = 32 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.
Frequency Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
IRL
(dB)
3400 MHz15.637.27.0–33.6–16
3500 MHz15.736.77.2–34.1–16
3600 MHz15.938.97.2–33.2–13

Documentation

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3 documents

Design Resources

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Design Files

2 design files

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