A3G26D055N: 700-850 MHz, 2400-2690 MHz, 8 W Avg., 48 V Airfast^® RF Power GaN Transistor

Key Parametrics

• Frequency (Min) (MHz)

  700

• Frequency (Max) (MHz)

  2690

• Supply Voltage (Typ) (V)

  48

• P3dB (Typ) (dBm)

  47.4

• P3dB (Typ) (W)

  55

• Output Power (Typ) (W) @ Intermodulation Level at Test Signal

  8.0 @ Avg

• Test Signal

  WCDMA

• Power Gain (Typ) (dB) @ f (MHz)

  18.0 @ 2675

• Efficiency (Typ) (%)

  54.1

• Thermal Resistance (Spec) (℃/W)

  3.7

• Matching

  input impedance matching

• Class

  AB, C

• Die Technology

  GaN

RF Performance Table

2600 MHz

Typical Doherty Single-Carrier W-CDMA Reference Circuit Performance: V_DD = 48 Vdc, I_DQA = 40 mA, V_GSB = –4.9 Vdc, P_out = 8 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ⁽¹⁾

Frequency	Gps (dB)	ηD (%)	Output PAR (dB)	ACPR (dBc)
2515 MHz	18.0	52.1	8.3	-27.4
2595 MHz	18.2	53.5	8.2	-28.2
2675 MHz	18.0	54.1	8.1	-30.1

1. All data measured in reference circuit with device soldered to printed circuit board.

700 MHz

Typical Class AB Side A (top side) W-CDMA Reference Circuit Performance: V_DD = 48 Vdc, I_DQA = 40 mA, P_out = 5.6 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ⁽¹⁾

Frequency	Gps (dB)	ηD (%)	Output PAR (dB)	P3dB (dBm)	ACPR (dBc)
750 MHz	20.0	41.7	7.0	44.5	-34.4
780 MHz	19.7	41.1	7.0	44.5	-34.3
810 MHz	19.2	40.6	7.0	44.5	-36.6

1. All data measured in reference circuit with device soldered to printed circuit board.